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ER1C-T PDF预览

ER1C-T

更新时间: 2024-01-11 16:28:34
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 105K
描述
Rectifier Diode,

ER1C-T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.92JESD-609代码:e0
湿度敏感等级:1端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

ER1C-T 数据手册

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ER1A  
THRU  
ER1M  
M C C  
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Micro Commercial Components  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
1 Amp Super Fast  
Recovery  
Silicon Rectifier  
50 to 1000 Volts  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Easy Pick And Place  
High Temp Soldering: 260°C for 10 Seconds At Terminals  
Superfast Recovery Times For High Efficiency  
Maximum Ratings  
DO-214AA  
(HSMB) (Round Lead)  
Operating Temperature(Tj): -50°C to +150°C  
Storage Temperature(Tstg): -50°C to +150°C  
Maximum Thermal Resistance; 15°C/W Junction To Lead  
H
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
Cathode Band  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
J
ER1A  
ER1B  
ER1C  
ER1D  
ER1G  
ER1J  
ER1K  
ER1M  
ER1A  
ER1B  
ER1C  
ER1D  
ER1G  
ER1J  
ER1K  
ER1M  
35V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
70V  
100V  
105V  
140V  
280V  
420V  
560V  
700V  
150V  
200V  
400V  
600V  
800V  
1000V  
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
Current  
IF(AV)  
1.0A  
TJ = 75°C  
INCHES  
MIN  
MM  
MIN  
DIM  
A
MAX  
.116  
.089  
.008  
.02  
MAX  
2.95  
2.25  
.20  
NOTE  
.078  
.075  
.002  
-----  
1.98  
1.90  
.05  
B
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
C
D
E
-----  
.90  
.51  
.035  
.065  
.205  
.160  
.130  
.055  
.091  
.224  
.180  
.155  
1.40  
2.32  
5.69  
4.57  
3.94  
Maximum  
Instantaneous  
F
1.65  
5.21  
4.06  
3.30  
G
H
J
Forward Voltage  
ER1A-D  
.975V  
1.35V  
1.60V  
VF  
IR  
IFM = 1.0A;  
TJ = 25°C*  
ER1G-K  
ER1M  
SUGGESTED SOLDER  
PAD LAYOUT  
Maximum DC  
0.090"  
Reverse Current At  
Rated DC Blocking  
Voltage  
5µA  
TJ = 25°C  
100µA TJ = 100°C  
Maximum Reverse  
0.085”  
Recovery Time  
ER1A-D  
50ns  
Trr  
CJ  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
Measured at  
1.0MHz, VR=4.0V  
ER1G-K  
60ns  
ER1M  
100ns  
0.070”  
Typical Junction  
Capacitance  
45pF  
*Pulse test: Pulse width 200 µsec, Duty cycle 2%  
www.mccsemi.com  
Revision: 5  
2005/07/18  
1 of 4  

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