Datasheet > EPW4-1200-S020A

EPW4-1200-S020A

更新时间： 2022-02-26 14:48:18

品牌	Logo	应用领域
科锐 - CREE		/
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描述
Silicon Carbide Schottky Diode

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数据手册

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EPW4-1200-S020A 数据手册

V_DS

I_D

R_DS(on)

900 V

25˚C

11.5 A

280 mΩ

EPW4-1200-S020A

Silicon Carbide Schottky Diode

E-Series Automotive

Features

Applications

•

4th Generation SiC Merged PIN Schottky Technology

Zero Reverse Recovery Current

High-Frequency Operation

Temperature-Independent Switching Behavior

AEC-Q101 Qualiﬁed and PPAP Capable

Humidity Resistant

•

Boost diodes in PFC or DC/DC stages

Free Wheeling Diodes in Inverter stages

AC/DC converters

Automotive and Traction Power Conversion

PV Inverters

Beneﬁts

Chip

•

Replace Bipolar with Unipolar Rectiﬁers

Essentially No Switching Losses

Higher Efﬁciency

Reduction of Heat Sink Requirements

Parallel Devices Without Thermal Runaway

Ideal for Outdoor Environments

Chip Outline

Ordering Part Number

Wafer Size

Die Size

Anode

Cathode

EPW4-1200-S020A-FR6*

150mm

3.08 x 3.08 mm²

Ni/Au

*Bare die are shipped as sawn full wafers mounted to UV tape attached to a ꢀꢁꢂmm frame. Electronic wafer maps are provided.

Maximum Ratings (T_C= 25 ˚C unless otherwise speciﬁed)

Symbol

Parameter

Value

Unit

Test Conditions

Note

V_RRM

V_R

Repetitive Peak Reverse Voltage

DC Peak Reverse Voltage

1200

I_F

Continuous Forward Current

T =175˚C

T_C=25˚C, t_P=10 ms, Half Sine Pulse

T_C=110˚C, t_P=10 ms, Half Sine Pulse

I_FRM

dV/dt

∫i²dt

Repetitive Peak Forward Surge Current

Diode dV/dt ruggedness

i²t value

250

V/ns

A²s

V_R=0-960V

84.5

60.5

T_C=25˚C, t_P=10 ms

T_C=110˚C, t_P=10 ms

-55 to

+175

T , T_stg

Operating Junction and Storage Temperature

Maximum Processing Temperature

˚C

T_Proc

325

10 min. maximum

Note (1): Assumes R_θJCThermal Resistance of 0.6˚C/W or less

EPW4-1200-S020A Rev. -, 07-2018

12 3 4 5

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