EPB3506
(T =25℃Unless otherwise specified)
■Electrical Characteristics
a
EPB3506
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
IF=0.5A,IR=1.0A,
IRR=0.25A
Maximum reverse recovery time
TRR
VF
ns
50
2.0
5
Maximum instantaneous forward
voltage drop per diode
V
IFM=17.5A
Tj =25℃
Maximum DC reverse current at
rated DC blocking voltage per
diode
IR
μA
pF
100
Tj =125℃
Measured at 1MHz
and Applied Reverse
Voltage of 4.0 V.D.C
Typical junction capacitance
Cj
175
Thermal Characteristics (T =25℃Unless otherwise specified)
■
a
EPB3506
PARAMETER
SYMBOL
UNIT
Between junction and ambient,
Without heatsink
RθJ-A
17.0
0.8
Typical
Thermal
Resistance
℃/W
Between junction and case,
With heatsink
RθJ-C
Note: Device mounted on 75mm x 45mm x 5.5mm Aluminum Plate Heatsink.
Ordering Information (Example)
■
■
PACKING
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
UNIT WEIGHT(g)
DELIVERY MODE
CODE
EPB3506
B1
Approximate 7.5
15
750
1500
TUBE
Characteristics (Typical)
FIG2:Surge Forward Current Capability
FIG1:Io-Tc Curve
525
350
175
0
heatsink
Tc-sensing point
35
half sine wave
with heatsink
0
8.3ms 8.3ms
1cycle
28
21
14
non-repetitive
Tj=25℃
without heatsink
7
0
80
0
20
40
60
100 120 140 160
180
1
2
5
10
20
50
100
Case Temperature(℃)
Number of Cycles
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B3046
Rev.1.0,06-Jun-23
www.21yangjie.com