Datasheet > EPB018A5

EPB018A5

更新时间： 2024-01-11 13:30:04

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
3页	42K
描述
Super Low Noise High Gain Heterojunction FET

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EPB018A5 数据手册

EPB018A5/A7/A9

Excelics

DATA SHEET

Super Low Noise High Gain Heterojunction FET

•

VERY HIGH fmax: 120GHz

TYPICAL 0.50~0.90dB NOISE FIGURE AND 12.0~13.0dB

ASSOCIATED GAIN AT 12GHz

•

0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL HETEROJUNCTION PROFILE

PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH

RELIABILITY

•

Idss SORTED IN 5 mA PER BIN RANGE

Chip Thickness: 75 13 microns

All Dimensions In Microns

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

0.50

0.65

0.95

13.0

12.5

12.0

15.0

13.0

0.60

0.80

1.20

EPB018A5

Noise Figure, f=12GHz

Vds=2V, Ids=15mA

EPB018A7

EPB018A9

EPB018A5

EPB018A7

EPB018A9

f=12GHz

12.0

11.5

11.0

Associated Gain, f=12GHz

Vds=2V, Ids=15mA

Output Power at 1dB Compression

Vds=3V, Ids=25mA

Gain at 1dB Compression

Vds=3V, Ids=25mA

dBm

P_1dB

f=18GHz

f=12GHz

f=18GHz

G_1dB

Saturated Drain Current Vds=2V, Vgs=0V

Transconductance Vds=2V, Vgs=0V

Pinch-off Voltage Vds=2V, Ids=1.0mA

Drain Breakdown Voltage Igd=10uA

Source Breakdown Voltage Igs=10uA

Thermal Resistance (Au-Sn Eutectic Attach)

Idss

-0.8

-6

-2.5

-3

BVgd

BVgs

Rth

-6

185

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

-3V

-2V

Idss

Forward Gate Current

Input Power

2mA

0.3mA

Igsf

Tch

Tstg

12dBm

175^oC

-65/175^oC

@1dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

740mW

625mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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