Datasheet > EPB018A7-70

EPB018A7-70

更新时间： 2024-01-20 04:56:25

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	35K
描述
Super Low Noise High Gain Heterojunction FET

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技术参数
数据手册

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EPB018A7-70 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大漏极电流 (Abs) (ID)：	0.06 A	FET 技术：	METAL SEMICONDUCTOR
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
功耗环境最大值：	0.285 W	子类别：	Other Transistors
Base Number Matches：	1

EPB018A7-70 数据手册

EPB018A5/A7/A9-70

Excelics

DATA SHEET

Super Low Noise High Gain Heterojunction FET

•

NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE

TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB

ASSOCIATED GAIN AT 12GHz

•

0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL HETEROJUNCTION PROFILE

PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH

RELIABILITY

All Dimensions In mils.

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

0.50

0.65

0.95

13.0

12.5

11.5

15.0

14.0

11.5

0.60

0.80

1.20

EPB018A5-70

Noise Figure, f=12GHz

Vds=2V, Ids=15mA

EPB018A7-70

EPB018A9-70

EPB018A5-70

EPB018A7-70

EPB018A9-70

f=12GHz

11.5

11.0

10.5

Associated Gain, f=12GHz

Vds=2V, Ids=15mA

Output Power at 1dB Compression

Vds=3V, Ids=25mA

Gain at 1dB Compression

Vds=3V, Ids=25mA

dBm

P_1dB

f=18GHz

f=12GHz

f=18GHz

G_1dB

Saturated Drain Current Vds=2V, Vgs=0V

Transconductance Vds=2V, Vgs=0V

Pinch-off Voltage Vds=2V, Ids=1.0mA

Drain Breakdown Voltage Igd=10uA

Source Breakdown Voltage Igs=10uA

Thermal Resistance

Idss

-0.8

-6

-2.5

-3

BVgd

BVgs

Rth

-6

480^*

^oC/W

^*Overall Rth depands on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

-3V

-2V

Idss

60mA

Forward Gate Current

Input Power

2mA

0.3mA

Igsf

Tch

Tstg

12dBm

175^oC

-65/175^oC

@1dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

285mW

240mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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