Datasheet > EPB025A-70

EPB025A-70

更新时间： 2024-09-21 06:57:39

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	23K
描述
Low Noise High Gain Heterojunction FET

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中文翻译

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技术参数
数据手册

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EPB025A-70 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

EPB025A-70 数据手册

EPB025A-70

Excelics

DATA SHEET

Low Noise High Gain Heterojunction FET

•

NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE

TYPICAL 0.85dB NOISE FIGURE AND 10.5dB

ASSOCIATED GAIN AT 12GHz

0.3 X 250 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

•

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH

RELIABILITY

All Dimensions In mils

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Noise Figure

Vds=2V, Ids=15mA

Associated Gain

Vds=2V, Ids=15mA

f = 12GHz

0.85

1.0

f = 12GHz

9.5

10.5

Output Power at 1dB Compression

Vds=3V, Ids=25mA

Gain at 1dB Compression

Vds=3V, Ids=25mA

f=12GHz

15.0

12.0

9.5

P_1dB

G_1dB

dBm

f=18GHz

f=12GHz

f=18GHz

Idss

Saturated Drain Current Vds=2V, Vgs=0V

Transconductance

Pinch-off Voltage

Vds=2V, Vgs=0V

Vds=2V, Ids=1.0mA

-1.0

-5

-2.5

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=10uA

Source Breakdown Voltage Igs=10uA

Thermal Resistance

-3

-5

370^*

^oC/W

^*Overall Rth depends on case mounting

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

-3V

Idss

50mA

Igsf

Tch

Tstg

Forward Gate Current

Input Power

2mA

0.3mA

12dBm

175^oC

-65/175^oC

370mW

@ 1dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

310mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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