Datasheet > EPB018B5

EPB018B5

更新时间： 2024-02-16 21:49:24

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
3页	94K
描述
Super Low Noise High Gain Heterojunction FET

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技术参数
数据手册

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EPB018B5 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

EPB018B5 数据手册

EPB018B5/B7/B9-70

ISSUED 11/01/2007

Super Low Noise High Gain Heterojunction FET

FEATURES

•

NON-HERMETIC LOW COST CERAMIC 70 mil

PACKAGE

TYPICAL 0.50~0.90dB NOISE FIGURE AND

11.5~13.0dB ASSOCIATED GAIN AT 12GHz

0.3 X 180 MICRON RECESSED “ MUSHROOM”

GATE

•

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES SUPER LOW NOISE, HIGH

GAIN AND HIGH RELIABILITY

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNITS

EPB018B5-70

EPB018B7-70

EPB018B9-70

0.50

0.65

0.95

0.60

0.80

1.20

Noise Figure, f = 12GHz

V_DS= 2 V, I_DS≈ 15 mA

EPB018B5-70

EPB018B7-70

EPB018B9-70

f = 12GHz

11.5

11.0

10.5

13.0

12.5

11.5

15.0

14.0

11.5

Associated Gain, f = 12GHz

V_DS= 2 V, I_DS≈ 15 mA

Output Power at 1dB Compression

V_DS= 3 V, I_DS= 25 mA

Gain at 1dB Compression

V_DS= 3 V, I_DS= 25 mA

P_1dB

G_1dB

dBm

f = 18GHz

f = 12GHz

f = 18GHz

I_DSS

G_M

Saturated Drain Current

Transconductance

_DS= 2 V, V_GS= 0 V

V_P

Pinch-off Voltage

_DS= 2 V, I_DS= 1.0 mA

-0.8

-6

-2.5

BV_GD

BV_GS

R_TH

Drain Breakdown Voltage

Source Breakdown Voltage

Thermal Resistance

_GD= 10 uA

_GS= 10 uA

-3

-6

^oC/W

480*

Notes: * Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25°C

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Vds

Drain-Source Voltage

Gate-Source Voltage

Drain Current

-3V

Vgs

-2V

Ids

Idss

2mA

60mA

0.3mA

Igsf

Forward Gate Current

Input Power

12dBm

175^oC

-65/175^oC

285mW

@1dB Compression

150^oC

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/150^oC

240mW

Notes: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 3

Revised November 2007

12 3

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