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EP4CE55F23C8LN PDF预览

EP4CE55F23C8LN

更新时间: 2024-02-25 16:55:20
品牌 Logo 应用领域
英特尔 - INTEL 时钟可编程逻辑
页数 文件大小 规格书
44页 663K
描述
Field Programmable Gate Array, 3491 CLBs, 362MHz, 55856-Cell, PBGA484, 23 X 23 MM, 1 MM PITCH, LEAD FREE, FBGA-484

EP4CE55F23C8LN 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:23 X 23 MM, 1 MM PITCH, LEAD FREE, FBGA-484Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.22
最大时钟频率:362 MHzJESD-30 代码:S-PBGA-B484
JESD-609代码:e1长度:23 mm
湿度敏感等级:3可配置逻辑块数量:3491
输入次数:327逻辑单元数量:55856
输出次数:327端子数量:484
最高工作温度:85 °C最低工作温度:
组织:3491 CLBS封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA484,22X22,40
封装形状:SQUARE封装形式:GRID ARRAY
峰值回流温度(摄氏度):260电源:1,1.2/3.3,2.5 V
可编程逻辑类型:FIELD PROGRAMMABLE GATE ARRAY认证状态:Not Qualified
座面最大高度:2.4 mm子类别:Field Programmable Gate Arrays
最大供电电压:1.03 V最小供电电压:0.97 V
标称供电电压:1 V表面贴装:YES
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
宽度:23 mmBase Number Matches:1

EP4CE55F23C8LN 数据手册

 浏览型号EP4CE55F23C8LN的Datasheet PDF文件第4页浏览型号EP4CE55F23C8LN的Datasheet PDF文件第5页浏览型号EP4CE55F23C8LN的Datasheet PDF文件第6页浏览型号EP4CE55F23C8LN的Datasheet PDF文件第8页浏览型号EP4CE55F23C8LN的Datasheet PDF文件第9页浏览型号EP4CE55F23C8LN的Datasheet PDF文件第10页 
Chapter 1: Cyclone IV Device Datasheet  
1–7  
Operating Conditions  
DC Characteristics  
This section lists the I/O leakage current, pin capacitance, on-chip termination (OCT)  
tolerance, and bus hold specifications for Cyclone IV devices.  
Supply Current  
The device supply current requirement is the minimum current drawn from the  
power supply pins that can be used as a reference for power size planning. Use the  
Excel-based early power estimator (EPE) to get the supply current estimates for your  
design because these currents vary greatly with the resources used. Table 1–6 lists the  
I/O pin leakage current for Cyclone IV devices.  
Table 1–6. I/O Pin Leakage Current for Cyclone IV Devices (1), (2)  
Symbol  
Parameter  
Conditions  
Device  
Min  
Typ  
Max  
Unit  
II  
Input pin leakage current  
VI = 0 V to VCCIOMAX  
–10  
10  
A  
Tristated I/O pin leakage  
current  
IOZ  
VO = 0 V to VCCIOMAX  
–10  
10  
A  
Notes to Table 1–6:  
(1) This value is specified for normal device operation. The value varies during device power-up. This applies for all VCCIO settings (3.3, 3.0, 2.5,  
1.8, 1.5, and 1.2 V).  
(2) The 10 A I/O leakage current limit is applicable when the internal clamping diode is off. A higher current can be observed when the diode is on.  
Bus Hold  
The bus hold retains the last valid logic state after the source driving it either enters  
the high impedance state or is removed. Each I/O pin has an option to enable bus  
hold in user mode. Bus hold is always disabled in configuration mode.  
Table 1–7 lists bus hold specifications for Cyclone IV devices.  
Table 1–7. Bus Hold Parameter for Cyclone IV Devices (Part 1 of 2) (1)  
V
CCIO (V)  
Parameter  
Condition  
1.2  
1.5  
1.8  
2.5  
3.0  
3.3  
Unit  
Min Max Min  
Max Min Max Min Max Min Max Min Max  
Bus hold  
low,  
sustaining  
current  
VIN > VIL  
(maximum)  
8
12  
–12  
30  
–30  
50  
–50  
70  
–70  
70  
–70  
A  
A  
Bus hold  
high,  
sustaining  
current  
VIN < VIL  
(minimum)  
–8  
Bus hold  
low,  
overdrive  
current  
0 V < VIN < VCCIO  
125  
–125  
175  
200  
–200  
300  
–300  
500  
–500  
500 A  
–500 A  
Bus hold  
high,  
overdrive  
current  
0 V < VIN < VCCIO  
–175  
March 2016 Altera Corporation  
Cyclone IV Device Handbook,  
Volume 3  

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