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EP01CV1 PDF预览

EP01CV1

更新时间: 2024-02-22 04:00:38
品牌 Logo 应用领域
三垦 - SANKEN 二极管
页数 文件大小 规格书
5页 310K
描述
Rectifier Diode, 1 Element, 0.2A, Silicon

EP01CV1 技术参数

生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:1.47
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大反向恢复时间:0.2 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

EP01CV1 数据手册

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EP01C  
Absolute Maximum Ratings  
Unless otherwise specified, TA = 25 °C  
Parameter  
Symbol  
VRSM  
VRM  
Rating  
1050  
1000  
0.2  
Unit  
V
Conditions  
Peak Repetitive Reverse Voltage  
Repetitive Reverse Voltage  
Average Forward Current  
V
IF(AV)  
A
See Figure 2 and Figure 3  
Half cycle sine wave,  
positive side, 10 ms,  
1 shot  
Surge Forward Current  
IFSM  
5
A
I2t Limiting Value  
I2t  
TJ  
0.125  
A2s  
°C  
1 ms t 10 ms  
Junction Temperature  
Storage Temperature  
40 to 150  
40 to 150  
TSTG  
°C  
Electrical Characteristics  
Unless otherwise specified, TA = 25 °C  
Parameter  
Symbol  
VF  
Conditions  
Min.  
Typ.  
Max.  
4.0  
Unit  
V
TJ = 25 °C, IF = 0.2 A  
TJ = 100 °C, IF = 0.2 A  
VR = VRM,  
Forward Voltage Drop  
1.3  
V
Reverse Leakage Current  
IR  
5
µA  
Reverse Leakage Current  
Under High Temperature  
HIR  
VR = VRM, TJ = 100 °C  
50  
µA  
ns  
IF = IRP = 100 mA  
90% recovery point,  
TJ = 25 °C  
trr1  
200  
Reverse Recovery Time  
Thermal Resistance (1)  
IF = 100 mA,  
IRP = 200 mA,  
75% recovery point,  
TJ = 25 °C  
trr2  
80  
ns  
Rth(J-L)  
See Figure 1  
20.0  
°C/W  
10 mm  
Device  
TL  
1.6 mm  
Diameter of soldering area: φ3 mm  
Cupper thickness: 50 µm  
Figure 1 Lead Temperature Measurement Conditions  
(1)  
R
th (J-L)  
is thermal resistance between junction and lead.  
EP01C-DSE Rev.1.0  
SANKEN ELCTRIC CO., LTD.  
2
Sep. 15, 2017  
http://www.sanken-ele.co.jp/en  
© SANKEN ELECTRIC CO., LTD. 2017  
 
 
 

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