Datasheet > EN9000A

EN9000A

更新时间： 2024-02-05 20:20:53

品牌	Logo	应用领域
三洋 - SANYO		开关驱动
页数	文件大小	规格书
7页	499K
描述
Low Voltage Drive Switching Device Applications

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中文翻译

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数据手册

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EN9000A 数据手册

MCH3383

Ordering number : EN9000A

SANYO Sem iconductors

DATA S HEET

P-Channel Silicon MOSFET

Low Voltage Drive Switching Device

Applications

MCH3383

Features

•

ON-resistance R (on)1=57m (typ.)

•

0.9V drive

Halogen free compliance

Protection diode in

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

--12

±5

DSS

GSS

--3.5

--14

1.0

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

Allowable Power Dissipation

Channel Temperature

Operating Temperature

Storage Temperature

When mounted on ceramic substrate (900mm²0.8mm)

°C

Tch

150

Topr

Tstg

--5 to +150

--55 to +150

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: MCPH3

7019A-003

• JEITA, JEDEC

: SC-70, SOT-323

• Minimum Packing Quantity : 3,000 pcs./reel

MCH3383-TL-H

0.15

2.0

Packing Type : TL

Marking

0 to 0.02

0.65

0.3

Electrical Connection

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

http://semicon.sanyo.com/en/network

53012TKIM/62211PE TKIM TC-00002604

No.9000-1/7

12 3 4 5 6 7

中文翻译

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