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EN8162A

更新时间： 2024-10-01 06:57:15
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三洋 - SANYO 开关通用开关
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描述
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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EN8162A 数据手册

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Ordering number : EN8162A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
MCH3456  
Features  
•
Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
1.5V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
15  
±10  
1.8  
DSS  
GSS  
V
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (900mm2✕0.8mm)  
7.2  
A
DP  
P
0.8  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
15  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
I
V
V
V
V
=15V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
=±8V, V =0V  
DS  
±10  
V
(off)  
GS  
=10V, I =1mA  
0.4  
1.5  
1.3  
D
Forward Transfer Admittance  
yfs  
=10V, I =1A  
2.6  
120  
165  
230  
310  
105  
30  
S
D
R
(on)1  
DS  
(on)2  
DS  
(on)3  
DS  
(on)4  
DS  
I
D
I
D
I
D
I
D
=1A, V =4V  
GS  
160  
240  
350  
750  
mΩ  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
R
R
R
=0.5A, V =2.5V  
GS  
Static Drain-to-Source On-State Resistance  
=0.1A, V =1.8V  
GS  
=0.1A, V =1.5V  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=10V, f=1MHz  
=10V, f=1MHz  
=10V, f=1MHz  
DS  
DS  
DS  
Coss  
Crss  
24  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
7.8  
27  
t
r
ns  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
18  
ns  
t
f
22  
ns  
Marking : LH  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
80906 / 12006PE MS IM TB-00002043 / D1504PE TS IM TB-00000382 No.8162-1/4  
1234

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