Datasheet > EN71NS128B0

EN71NS128B0

更新时间： 2022-12-18 00:37:49

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
8页	637K
描述
Stacked Multi-Chip Product (MCP) Flash Memory and RAM

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EN71NS128B0 数据手册

EN71NS128B0

EN71NS128B0 Base MCP

Stacked Multi-Chip Product (MCP) Flash Memory and RAM

128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous

Operation Burst Mode Flash Memory and

32 Megabit (2M x 16-bit) Pseudo Static RAM

Distinctive Characteristics

MCP Features

Power supply voltage of 1.7V to 1.95V

Operating Temperature

- 25°C to +85°C

High performance

- 70 ns @ random access

- 7 ns @ burst access (108MHz)

Package

- 8 x 9.2mm 56 ball FBGA

General Description

The EN71NS series is a product line of stacked Multi-Chip Product (MCP) packages and consists of:

E29NS128 (Burst mode) Flash memory die.

Pseudo SRAM.

For detailed specifications, Please refer to the individual datasheets listed in the following table.

Device

Document

EN29NS128

ENPSS32

NOR Flash

Pseudo SRAM

Product Selector Guide

128 Mb Flash Memories

Device-Model#

EN71NS128B0

pSRAM density

32M pSRAM

70ns at Async. Mode

7ns at Burst Read

70ns at Async. Mode

7ns at Burst Read

Flash Access time

pSRAM Access time

pSRAM Burst mode

max frequency

pSRAM Burst mode

max frequency

108MHz

Package

56-ball FBGA

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. A, Issue Date: 2009/7/24

12 3 4 5 6 7 8

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