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EN29LV400AT-45RTC PDF预览

EN29LV400AT-45RTC

更新时间： 2024-01-23 00:13:01
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
41页 378K
描述
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV400AT-45RTC 技术参数

是否Rohs认证：符合生命周期：Transferred
包装说明：TSOP1, TSSOP48,.8,20Reach Compliance Code：unknown
HTS代码：8542.32.00.51风险等级：5.62
Is Samacsys：N最长访问时间：45 ns
备用内存宽度：8启动块：TOP
命令用户界面：YES数据轮询：YES
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDSO-G48
长度：18.4 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：1,2,1,7
端子数量：48字数：262144 words
字数代码：256000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP48,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3.3 V编程电压：3 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1.2 mm部门规模：16K,8K,32K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.03 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：YES
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

EN29LV400AT-45RTC 数据手册

 浏览型号EN29LV400AT-45RTC的Datasheet PDF文件第2页浏览型号EN29LV400AT-45RTC的Datasheet PDF文件第3页浏览型号EN29LV400AT-45RTC的Datasheet PDF文件第4页浏览型号EN29LV400AT-45RTC的Datasheet PDF文件第5页浏览型号EN29LV400AT-45RTC的Datasheet PDF文件第6页浏览型号EN29LV400AT-45RTC的Datasheet PDF文件第7页 
EN29LV400A  
EN29LV400A  
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
• 3V, single power supply operation  
• High performance program/erase speed  
- Byte/Word program time: 8µs typical  
- Sector erase time: 500ms typical  
- Full voltage range: 2.7-3.6 volt read and write  
operations for battery-powered applications.  
- Regulated voltage range: 3.0-3.6 volt read  
and write operations for compatibility with  
high performance 3.3 volt microprocessors.  
• JEDEC Standard Embedded Erase and  
Program Algorithms  
• High performance  
- Access times as fast as 45 ns  
• JEDEC standard DATA# polling and toggle  
bits feature  
• Single Sector and Chip Erase  
• Sector Unprotect Mode  
• Low power consumption (typical values at 5  
MHz)  
- 7 mA typical active read current  
- 15 mA typical program/erase current  
- 1 µA typical standby current (standard access  
time to active mode)  
• Erase Suspend / Resume modes:  
Read or program another Sector during  
Erase Suspend Mode  
• triple-metal double-poly triple-well CMOS  
Flash Technology  
• Flexible Sector Architecture:  
- One 16 K-byte, two 8 K-byte, one 32 K-byte,  
and seven 64 K-byte sectors (byte mode)  
- One 8 K-word, two 4 K-word, one 16 K-word  
and seven 32 K-word sectors (word mode)  
• Low Vcc write inhibit < 2.5V  
• minimum 1,000K program/erase endurance  
cycle  
• Package Options  
• Sector protection:  
- Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
- 48-pin TSOP (Type 1)  
- 48-ball 6mm x 8mm FBGA  
• Commercial and Industrial Temperature  
Range  
- Additionally, temporary Sector Unprotect  
allows code changes in previously locked  
sectors.  
GENERAL DESCRIPTION  
The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The  
EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to  
eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV400A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single  
Sector or full chip erase operation, where each Sector can be individually protected against  
program/erase operations or temporarily unprotected to erase or program. The device can sustain  
a minimum of 100K program/erase cycles on each Sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. A, Issue Date: 2005/01/07  
1234567...41

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EN29LV400AT-55RBI EON

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EN29LV400AT55RBIP EON

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