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EN29LV160CT-70BIP PDF预览

EN29LV160CT-70BIP

更新时间： 2024-09-26 12:20:55
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
44页 435K
描述
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV160CT-70BIP 技术参数

生命周期：Transferred包装说明：LFBGA,
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.74
最长访问时间：70 ns其他特性：TOP BOOT SECTOR
备用内存宽度：8启动块：TOP
JESD-30 代码：R-PBGA-B48长度：8 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
端子数量：48字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX16封装主体材料：PLASTIC/EPOXY
封装代码：LFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, LOW PROFILE, FINE PITCH并行/串行：PARALLEL
编程电压：3 V座面最大高度：1.3 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM宽度：6 mm

EN29LV160CT-70BIP 数据手册

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EN29LV160C  
EN29LV160C  
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
• 3.0V, single power supply operation  
- Minimizes system level power requirements  
• High performance program/erase speed  
- Byte/Word program time: 8µs typical  
- Sector erase time: 100ms typical  
- Chip erase time: 4s typical  
• High performance  
- Access times as fast as 70 ns  
• Low power consumption (typical values at 5  
MHz)  
• JEDEC Standard program and erase  
commands  
- 9 mA typical active read current  
- 20 mA typical program/erase current  
- Less than 1 μA standby current  
• JEDEC standard DATA# polling and toggle  
bits feature  
• Single Sector and Chip Erase  
• Sector Unprotect Mode  
• Flexible Sector Architecture:  
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,  
and thirty-one 64-Kbyte sectors (byte mode)  
- One 8-Kword, two 4-Kword, one 16-Kword  
and thirty-one 32-Kword sectors (word mode)  
• Embedded Erase and Program Algorithms  
• Erase Suspend / Resume modes:  
Read and program another Sector during  
Erase Suspend Mode  
• Sector protection :  
- Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
• Triple-metal double-poly triple-well CMOS  
Flash Technology  
- Additionally, temporary Sector Group  
Unprotect allows code changes in previously  
locked sectors.  
• Low Vcc write inhibit < 2.5V  
• minimum 100K program/erase endurance  
cycle  
• Secured Silicon Sector  
- Provides a 128-words area for code or data  
• Package Options  
that can be permanently protected.  
- 48-pin TSOP (Type 1)  
- Once this sector is protected, it is prohibited  
to program or erase within the sector again.  
- 48 ball 6mm x 8mm TFBGA  
• Industrial Temperature Range  
GENERAL DESCRIPTION  
The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The  
EN29LV160C features 3.0V voltage read and write operation, with access times as fast as 70ns to  
eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV160C has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single Sector or  
full chip erase operation, where each Sector can be individually protected against program/erase  
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K  
program/erase cycles on each Sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
© 2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
1
Rev. C, Issue Date: 2011/10/26  
1234567...44

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与EN29LV160CT-70BIP相关器件

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EN29LV160CT-70TIP EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160J ETC

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70S ETC

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70SI ETC

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70SIP ETC

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70SP ETC

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70T ETC

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70TI ETC

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70TIP ETC

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70TP ETC

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.

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