Datasheet > 存储 > 闪存> EN29F040A-55PI

EN29F040A-55PI

更新时间： 2025-07-28 06:57:15

品牌	Logo	应用领域
EON		/
页数	文件大小	规格书
35页	272K
描述
4 Megabit (512K x 8-bit) Flash Memory

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EN29F040A-55PI 数据手册

EN29F040A

4 Megabit (512K x 8-bit) Flash Memory

FEATURES

• JEDEC Standard program and erase

commands

• 5.0V operation for read/write/erase

operations

• JEDEC standard

polling and toggle

DATA

• Fast Read Access Time

bits feature

- 45ns, 55ns, 70ns, and 90ns

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Sector Architecture:

- 8 uniform sectors of 64Kbytes each

- Supports full chip erase

• Embedded Erase and Program Algorithms

- Individual sector erase supported

- Sector protection:

Hardware locking of sectors to prevent

program or erase operations within

individual sectors

• Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

• 0.23 µm triple-metal double-poly

triple-well CMOS Flash Technology

• High performance program/erase speed

- Byte program time: 10µs typical

- Sector erase time: 500ms typical

- Chip erase time: 3.5s typical

• Low Vcc write inhibit < 3.2V

• 100K endurance cycle

• Package Options

- 32-pin PDIP

• Low Standby Current

- 1µA CMOS standby current-typical

- 1mA TTL standby current

- 32-pin PLCC

• Low Power Active Current

- 30mA active read current

- 30mA program/erase current

- 32-pin TSOP (Type 1)

• Commercial and Industrial Temperature

Ranges

GENERAL DESCRIPTION

The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform

sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A

features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the

need for WAIT states in high-performance microprocessor systems.

The EN29F040A has separate Output Enable (

), Chip Enable (

), and Write Enable (

)

W E

controls, which eliminate bus contention issues. This device is designed to allow either single (or

multiple) Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain a

minimum of 100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. B, Issue Date: 2004/04/01

12 3 4 5 6 7...35

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与EN29F040A-55PI相关器件

型号	品牌	获取价格	描述	数据表
EN29F040A-55PIP	EON	获取价格	4 Megabit (512K x 8-bit) Flash Memory
EN29F040A-55TC	EON	获取价格	4 Megabit (512K x 8-bit) Flash Memory
EN29F040A-55TCP	EON	获取价格	4 Megabit (512K x 8-bit) Flash Memory
EN29F040A-55TI	EON	获取价格	4 Megabit (512K x 8-bit) Flash Memory
EN29F040A-55TIP	EON	获取价格	4 Megabit (512K x 8-bit) Flash Memory
EN29F040A-70JC	EON	获取价格	4 Megabit (512K x 8-bit) Flash Memory
EN29F040A-70JCP	EON	获取价格	4 Megabit (512K x 8-bit) Flash Memory
EN29F040A-70JI	EON	获取价格	4 Megabit (512K x 8-bit) Flash Memory
EN29F040A-70JIP	EON	获取价格	4 Megabit (512K x 8-bit) Flash Memory
EN29F040A-70PC	EON	获取价格	4 Megabit (512K x 8-bit) Flash Memory

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