EN25Q16-100WIP PDF预览

EN25Q16-100WIP

更新时间: 2025-07-23 06:57:11
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
40页 749K
描述
16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

EN25Q16-100WIP 数据手册

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EN25Q16  
EN25Q16  
16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector  
FEATURES  
Single power supply operation  
- Full voltage range: 2.7-3.6 volt  
Software and Hardware Write Protection:  
- Write Protect all or portion of memory via  
software  
Serial Interface Architecture  
- SPI Compatible: Mode 0 and Mode 3  
- Enable/Disable protection with WP# pin  
High performance program/erase speed  
- Page program time: 1.3ms typical  
- Sector erase time: 90ms typical  
- Block erase time 400ms typical  
- Chip erase time: 12 seconds typical  
16 Mbit Serial Flash  
- 16 M-bit/2048 K-byte/8192 pages  
- 256 bytes per programmable page  
Standard, Dual or Quad SPI  
- Standard SPI: CLK, CS#, DI, DO, WP#  
- Dual SPI: CLK, CS#, DQ0, DQ1, WP#  
- Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3  
Lockable 128 byte OTP security sector  
Minimum 100K endurance cycle  
High performance  
Package Options  
- 100MHz clock rate for one data bit  
- 80MHz clock rate for two data bits  
- 80MHz clock rate for four data bits  
- 8 pins SOP 150mil body width  
- 8 pins SOP 200mil body width  
- 8 contact VDFN  
- 8 pins PDIP  
- All Pb-free packages are RoHS compliant  
Low power consumption  
- 12 mA typical active current  
- 1 μA typical power down current  
Industrial temperature Range  
Uniform Sector Architecture:  
- 512 sectors of 4-Kbyte  
- 32 blocks of 64-Kbyte  
- Any sector or block can be erased individually  
GENERAL DESCRIPTION  
The EN25Q16 is a 16-Megabit (2048K-byte) Serial Flash memory, with advanced write protection  
mechanisms. The EN25Q16 supports the standard Serial Peripheral Interface (SPI), and a high  
performance Dual/Quad output as well as Dual/Quad I/O using SPI pins: Serial Clock, Chip Select,  
Serial DQ0(DI), DQ1(DO), DQ2(WP#) and DQ3(NC). SPI clock frequencies of up to 80MHz are  
supported allowing equivalent clock rates of 160MHz for Dual Output and 320MHz for Quad Output  
when using the Dual/Quad Output Fast Read instructions. The memory can be programmed 1 to 256  
bytes at a time, using the Page Program instruction.  
The EN25Q16 is designed to allow either single Sector/Block at a time or full chip erase operation. The  
EN25Q16 can be configured to protect part of the memory as the software protected mode. The device  
can sustain a minimum of 100K program/erase cycles on each sector or block.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
1
Rev. E, Issue Date: 2009/10/21  

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