EN25B20T-50GI

更新时间： 2024-10-01 04:55:11

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
32页	393K
描述
2 Mbit Serial Flash Memory with Boot and Parameter Sectors

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EN25B20T-50GI 数据手册

EN25B20

2 Mbit Serial Flash Memory with Boot and Parameter Sectors

FEATURES

• Software and Hardware Write Protection:

• Single power supply operation

- Write Protect all or portion of memory via

- Full voltage range: 2.7-3.6 volt

software

• 2 M-bit Serial Flash

- Enable/Disable protection with WP# pin

- 2 M-bit/256 K-byte/1024 pages

- 256 bytes per programmable page

• High performance program/erase speed

- Byte program time: 7µs typical

- Page program time: 1.5ms typical

- Sector erase time: 300 to 800ms typical

- Chip erase time: 3 Seconds typical

• High performance

- 75MHz clock rate

• Low power consumption

- 5 mA typical active current

• Minimum 100K endurance cycle

- 1 μA typical power down current

• Package Options

- 8 pins SOP 150mil body width

- 8 contact VDFN

- All Pb-free packages are RoHS compliant

• Flexible Sector Architecture:

- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one

32-Kbyte, and three 64-Kbyte sectors

• Commercial and industrial temperature Range

GENERAL DESCRIPTION

The EN25B20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to

256 bytes at a time, using the Page Program instruction.

The EN25B20 has eight sectors including three sectors of 64KB, one sector of 32KB, one sector of

16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single

Sector at a time or full chip erase operation. The EN25B20 can protect boot code stored in the small

sectors for either bottom or top boot configurations. The device can sustain a minimum of 100K

program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2006/12/26

12 3 4 5 6 7...32

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