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EN25B20T-75VI PDF预览

EN25B20T-75VI

更新时间: 2024-10-01 04:55:11
品牌 Logo 应用领域
EON 闪存存储
页数 文件大小 规格书
32页 393K
描述
2 Mbit Serial Flash Memory with Boot and Parameter Sectors

EN25B20T-75VI 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

EN25B20T-75VI 数据手册

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EN25B20  
EN25B20  
2 Mbit Serial Flash Memory with Boot and Parameter Sectors  
FEATURES  
Software and Hardware Write Protection:  
Single power supply operation  
- Write Protect all or portion of memory via  
- Full voltage range: 2.7-3.6 volt  
software  
2 M-bit Serial Flash  
- Enable/Disable protection with WP# pin  
- 2 M-bit/256 K-byte/1024 pages  
- 256 bytes per programmable page  
High performance program/erase speed  
- Byte program time: 7µs typical  
- Page program time: 1.5ms typical  
- Sector erase time: 300 to 800ms typical  
- Chip erase time: 3 Seconds typical  
High performance  
- 75MHz clock rate  
Low power consumption  
- 5 mA typical active current  
Minimum 100K endurance cycle  
- 1 μA typical power down current  
Package Options  
- 8 pins SOP 150mil body width  
- 8 contact VDFN  
- All Pb-free packages are RoHS compliant  
Flexible Sector Architecture:  
- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one  
32-Kbyte, and three 64-Kbyte sectors  
Commercial and industrial temperature Range  
GENERAL DESCRIPTION  
The EN25B20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection  
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to  
256 bytes at a time, using the Page Program instruction.  
The EN25B20 has eight sectors including three sectors of 64KB, one sector of 32KB, one sector of  
16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single  
Sector at a time or full chip erase operation. The EN25B20 can protect boot code stored in the small  
sectors for either bottom or top boot configurations. The device can sustain a minimum of 100K  
program/erase cycles on each sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. C, Issue Date: 2006/12/26  

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