Datasheet > EMZB08P03H

EMZB08P03H

更新时间： 2024-05-23 22:23:02

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	939K
描述
EDFN5X6

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中文翻译

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数据手册

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EMZB08P03H 数据手册

EMZB08P03H

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

-30V

8.5mΩ

-70A

RDSON (MAX.)

P Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ESD Protection

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

-70

-21

-14

-50

-150

-50

125

Continuous Drain Current

I_D

T_A= 25 °C(t≦10s)

T_A= 25 °C(Steady-State)

T_C= 100 °C

Pulsed Drain Current¹

I_DM

I_AS

Avalanche Current

L = 0.1mH, I_AS=-50A, RG=25Ω

T_C= 25 °C

Avalanche Energy

Power Dissipation

E_AS

P_D

T_C= 100 °C

T_A= 25 °C

2.5

Power Dissipation

P_D

°C

T_A= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

100% UIS testing in condition of V_D=-15V, L=0.1mH, V_G=-10V, I_L=-40A, Rated V_DS=-30V P-CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

2.5

°C / W

Junction-to-Ambient³

t ≦ 10s

R_JA

Steady-State

R_JA

2019/3/14

p.1

12 3 4 5 6 7

中文翻译

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