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EMZB08P03V PDF预览

EMZB08P03V

更新时间: 2024-05-23 22:23:10
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
7页 875K
描述
EDFN3X3

EMZB08P03V 数据手册

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EMZB08P03V  
P-Channel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
BVDSS  
-30V  
8.5mΩ  
-25A  
RDSON (MAX.)  
ID  
P-Channel MOSFET  
UIS, Rg 100% Tested  
Pb-Free Lead Plating & Halogen Free  
ESD Protection  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
-25  
UNIT  
Gate-Source Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TA = 25 °C  
-14  
A
TC = 100 °C  
-18  
Pulsed Drain Current1  
IDM  
IAS  
-100  
-25  
Avalanche Current  
L = 0.1mH, IAS=-25A, RG=25Ω  
TC = 25 °C  
Avalanche Energy  
Power Dissipation  
EAS  
31.25  
21  
mJ  
W
PD  
TC = 100 °C  
8.3  
TA = 25 °C  
2.5  
Power Dissipation  
PD  
W
°C  
TA = 100 °C  
1
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
100% UIS testing in condition of VD=-15V, L=0.1mH, VG=-10V, IL=-20A, Rated VDS=-30V P-CH  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
Junction-to-Case  
Junction-to-Ambient3  
6
°C / W  
50  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
2019/6/25  
p.1  

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