Datasheet > EM614163TS-35

EM614163TS-35

更新时间： 2025-08-28 22:14:51

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
23页	147K
描述
256K x 16 High Speed EDO DRAM

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中文翻译

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数据手册

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EM614163TS-35 数据手册

EtronTech

Em614163A-30/35/40/45

256K x 16 High Speed EDO DRAM

Preliminary

Features

Pin Assignment (Top View)

· Fast Access Time: 30/35/40/45ns

· Fast EDO Page Cycle Time: 13.3/15/16/18ns

· EDO Page Mode Operation

40-Pin SOJ

40/44-Pin TSOP-II

Vcc

I/O0

I/O1

I/O2

I/O3

Vcc

I/O4

I/O5

I/O6

I/O7

Vss

Vcc

I/O0

I/O1

I/O2

I/O3

Vcc

I/O4

I/O5

I/O6

I/O7

Vss

I/O15

I/O14

I/O13

I/O12

Vss

I/O11

I/O10

I/O9

I/O15

I/O14

I/O13

I/O12

Vss

I/O11

I/O10

I/O9

I/O8

LCAS

UCAS

¡ Ó

· Single +5V

10% Power Supply

· Low Power Dissipation

· Individual Byte Control via Dual CAS Inputs

I/O8

· Three Refresh Modes

RAS

Vcc

· 512-Cycle Refresh in 8ms(9 rows and 9 columns)

· TTL Compatible

LCAS

UCAS

Vss

RAS

· 40-Pin, 400-mil Plastic SOJ Package, or

40/44-Pin, 400-mil Plastic TSOP-II Package.

Vss

Vcc

Ordering Information

Part Number

Speed

30ns

35ns

40ns

45ns

Package

SOJ

Pin Names

Em614163A-30

EM614163TS-30

Em614163A-35

EM614163TS-35

Em614163A-40

EM614163TS-40

Em614163A-45

EM614163TS-45

A0 - A8

RAS

Address Inputs

TSOP-II

SOJ

Row Address Strobe

UCAS

Column Address Strobe

(Upper Byte Control)

TSOP-II

SOJ

LCAS

Column Address Strobe

(Lower Byte Control)

TSOP-II

SOJ

Write Enable

Output Enable

Data Input/Output

+5V Power Supply

Ground

TSOP-II

Key Specifications

I/O0 - I/O15

VCC

Speed tRAC

tCAC

tAA

tOEA

tRC

tPC

-30

-35

-40

-45

30ns

9ns

16ns

9ns

53ns 13.3ns

60ns 15ns

VSS

35ns 10ns 18ns

No Connection

40ns 11ns 20ns 10ns 66ns 16ns

45ns 12ns 22ns 10ns 75ns 18ns

Overview

The Em614163A-30/35/40/45 is a high speed

precharge time to occur without the output data

CAS

EDO(Extended Data Output) DRAM organized in

262,144 words by 16 bits. It supports EDO Page

Mode and 16-bit data width for high data bandwidth

applications. The EDO Page Mode is an

accelerated access that provides a shorter page

cycle and a faster data access time than the

traditional Fast Page Mode.

going invalid. Therefore, the EDO

timing can be

condensed to carry more data out in a given period.

The Em614163A-30/35/40/45 fully utilizes the

EDO Page Mode advantages. It allows 512 random

access within a page with a fast cycle time as short

as 13.3/15/16/18 ns.

The Em614163A-30/35/40/45 is ideally suitable

for high performance graphics frame buffers, CD-

ROMs, disk drivers, set top boxes, and DSP

applications.

Compared with Fast Page Mode DRAM, the

CAS

EDO DRAM data output will be held valid after

RAS

are held LOW

goes HIGH, as long as

and

CAS

is held HIGH. This feature allows

and

Etron Technology, Inc.

1F, No. 1, Prosperity Rd. 1, Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C.

TEL: (886)-3-5782345 FAX: (886)-3-5779001

Etron Technology, Inc. reserves the right to make changes to its products and specifications

without notice.

April 1997

12 3 4 5 6 7...23

中文翻译

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与EM614163TS-35相关器件

型号	品牌	获取价格	描述	数据表
EM614163TS-40	ETC	获取价格	256K x 16 High Speed EDO DRAM
EM614163TS-45	ETC	获取价格	256K x 16 High Speed EDO DRAM
EM6141FR32AW-10L	EMLSI	获取价格	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM6141FR32AW-10S	EMLSI	获取价格	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM6141FR32AW-12L	EMLSI	获取价格	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM6141FR32AW-12S	EMLSI	获取价格	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM6141FR32CW-10L	EMLSI	获取价格	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM6141FR32CW-10S	EMLSI	获取价格	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM6141FR32CW-12L	EMLSI	获取价格	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM6141FR32CW-12S	EMLSI	获取价格	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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