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EM128C08N-10 PDF预览

EM128C08N-10

更新时间: 2024-09-24 21:54:35
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
7页 64K
描述
128Kx8 Bit Ultra-Low Power Asynchronous Static RAM

EM128C08N-10 数据手册

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NanoAmp Solutions, Inc.  
1982 Zanker Road, San Jose, CA 95112  
ph: 408-573-8878, FAX: 408-573-8877  
www.nanoamp.com  
EM128C08  
EM128C08 Family  
128Kx8 Bit Ultra-Low Power Asynchronous Static RAM  
Overview  
Features  
The EM128C08 is an integrated memory device  
containing a low power 1 Mbit Static Random  
Access Memory organized as 131,072 words by 8  
bits. The device is fabricated using NanoAmp’s  
advanced CMOS process and high-speed/low-  
power circuit technology. This device is designed  
for very low voltage operation making it quite suit-  
Extremely Wide Operating Voltage  
1.5 to 3.6 Volts  
Extended Temperature Range  
o
o
Standard: -20 to +80 C  
Fast Cycle Time  
Standard: < 70 ns @ 3 Volts  
-10: < 100 ns @ 3 Volts  
Very Low Operating Current  
able for battery powered devices.  
It is also  
designed for both very low operating and standby-  
currents. The device pinout is compatible with  
other standard 128Kx8 SRAMs.  
I
< 1 mA maximum at 2V, 1 Mhz  
CC  
Very Low Data Rentention Voltage  
1.2 Volts Minimum  
Very Low Standby Current  
o
1 mA max. @ 55 C  
32-Pin TSOP, STSOP, SOP and 48-Pin  
BGA Packages Available  
FIGURE 1: Operating Envelope  
20  
14 Mhz  
15  
10  
10 Mhz  
5 Mhz  
5
2.5 Mhz  
1 Mhz  
0
1
2
3
4
V
(V)  
CC  
Stock No. 23005-07 6/99  
1

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