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EL7158ISZ-T13 PDF预览

EL7158ISZ-T13

更新时间: 2024-02-26 09:37:38
品牌 Logo 应用领域
英特矽尔 - INTERSIL 驱动器接口集成电路光电二极管
页数 文件大小 规格书
8页 224K
描述
Ultra-High Current Pin Driver

EL7158ISZ-T13 技术参数

生命周期:Unknown零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:7 weeks
风险等级:5.28Is Samacsys:N
接口集成电路类型:HALF BRIDGE BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9022 mm
湿度敏感等级:3功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C输出电流流向:SOURCE AND SINK
标称输出峰值电流:12 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:12 V
认证状态:Not Qualified座面最大高度:1.7272 mm
子类别:Other Interface ICs最大供电电压:12 V
最小供电电压:4.5 V标称供电电压:12 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9116 mm
Base Number Matches:1

EL7158ISZ-T13 数据手册

 浏览型号EL7158ISZ-T13的Datasheet PDF文件第2页浏览型号EL7158ISZ-T13的Datasheet PDF文件第3页浏览型号EL7158ISZ-T13的Datasheet PDF文件第4页浏览型号EL7158ISZ-T13的Datasheet PDF文件第5页浏览型号EL7158ISZ-T13的Datasheet PDF文件第6页浏览型号EL7158ISZ-T13的Datasheet PDF文件第7页 
EL7158  
Power Dissipation Calculation  
When switching at high speeds, or driving heavy loads, the  
EL7158 drive capability is limited by the rise in die  
temperature brought about by internal power dissipation. For  
reliable operation die temperature must be kept below  
Applications Information  
Product Description  
The EL7158 is a high performance 40MHz pin driver. It  
contains two analog switches connecting V and V to OUT.  
Depending on the value of the IN pin, one of the two  
switches will be closed and the other switch open. An output  
enable (OE) is also supplied which opens both switches  
simultaneously.  
H
L
T
(125°C). It is necessary to calculate the power  
JMAX  
dissipation for a given application prior to selecting the  
package type.  
Power dissipation may be calculated:  
Due to the topology of the EL7158, both the V and V pins  
H
L
2
2
PD = (V × I ) + (C  
× V × f) + (C × V  
× f)  
OUT  
can be connected to any voltage between the V + and V -  
S
S
S
S
INT  
S
L
pins, but V must be greater than V in order to prevent  
H
L
where:  
turning on the body diode at the output stage.  
V is the total power supply to the EL7158 (from V + to  
Three-State Operation  
S
S
GND)  
When the OE pin is low, the output is three-state (floating.)  
The output voltage is the parasitic capacitance’s voltage. It  
can be any voltage between V and V , depending on the  
V
is the swing on the output (V - V )  
H L  
OUT  
C is the load capacitance  
H
L
L
previous state. At three-state, the output voltage can be  
C
is the internal load capacitance (100pF max)  
INT  
is the quiescent supply current (3mA max)  
pushed to any voltage between V and V . The output  
H
L
I
S
voltage can’t be pushed higher than V or lower than V  
H
L
f is frequency  
since the body diode at the output stage will turn on.  
Having obtained the application’s power dissipation, a  
maximum package thermal coefficient may be determined,  
Supply Voltage Range and Input Compatibility  
The EL7158 is designed for operation on supplies from 5V to  
18V (4.5V to 18V maximum). Table 2 shows the  
to maintain the internal die temperature below T  
:
JMAX  
T
T  
MAX  
PD  
JMAX  
specifications for the relationship between the V +, V -, V ,  
S
S
H
θ
= ----------------------------------------  
JA  
V , and GND pins.  
L
where:  
All input pins are compatible with both 3V and 5V CMOS  
signals. With a positive supply (V +) of 5V, the EL7158 is  
S
T
T
is the maximum junction temperature (125°C)  
JMAX  
is the maximum operating temperature  
also compatible with TTL inputs.  
MAX  
Power Supply Bypassing  
PD is the power dissipation calculated above  
When using the EL7158, it is very important to use adequate  
power supply bypassing. The high switching currents  
developed by the EL7158 necessitate the use of a bypass  
θ
thermal resistance on junction to ambient  
JA  
is 160°C/W for the SO8 package when using a standard  
θ
JA  
JEDEC JESD51-3 single-layer test board. If T  
is  
JMAX  
capacitor between the supplies (V + & V -) and GND pins.  
S
S
greater than 125°C when calculated using the equation  
above, then one of the following actions must be taken:  
It is recommended that a 2.2µF tantalum capacitor be used  
in parallel with a 0.1µF low-inductance ceramic MLC  
capacitor. These should be placed as close to the supply  
Reduce θ the system by designing more heat-sinking  
into the PCB (as compared to the standard JEDEC  
JESD51-3)  
JA  
pins as possible. It is also recommended that the V and V  
pins have some level of bypassing, especially if the EL7158  
is driving highly capacitive loads.  
H
L
De-rate the application either by reducing the switching  
frequency, the capacitive load, or the maximum operating  
(ambient) temperature (T  
)
MAX  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
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