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EL2125CW-T7 PDF预览

EL2125CW-T7

更新时间: 2024-02-12 07:51:30
品牌 Logo 应用领域
英特矽尔 - INTERSIL 放大器光电二极管局域网
页数 文件大小 规格书
15页 401K
描述
Ultra-Low Noise, Low Power, Wideband Amplifier

EL2125CW-T7 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SOT-23, 5 PIN
针数:5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.74Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
标称共模抑制比:106 dB频率补偿:YES
最大输入失调电压:3000 µVJESD-30 代码:R-PDSO-G5
JESD-609代码:e0长度:2.9 mm
低-偏置:NO低-失调:NO
微功率:NO湿度敏感等级:1
负供电电压上限:-16.5 V标称负供电电压 (Vsup):-5 V
功能数量:1端子数量:5
最高工作温度:85 °C最低工作温度:-45 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSOP5/6,.11,37封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH峰值回流温度(摄氏度):240
功率:NO电源:+-5/+-15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.45 mm最小摆率:150 V/us
标称压摆率:185 V/us子类别:Operational Amplifiers
最大压摆率:12 mA供电电压上限:16.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:BIPOLAR温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:150000 kHz
最小电压增益:10000宽带:YES
宽度:1.6 mmBase Number Matches:1

EL2125CW-T7 数据手册

 浏览型号EL2125CW-T7的Datasheet PDF文件第1页浏览型号EL2125CW-T7的Datasheet PDF文件第3页浏览型号EL2125CW-T7的Datasheet PDF文件第4页浏览型号EL2125CW-T7的Datasheet PDF文件第5页浏览型号EL2125CW-T7的Datasheet PDF文件第6页浏览型号EL2125CW-T7的Datasheet PDF文件第7页 
EL2125  
Absolute Maximum Ratings (T = 25°C)  
A
V + to V - . . . . . . . . . . . . . . . . . . . . . . . . . .  
33V  
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA  
Any Input . . . . . . . . . . . . . . . . . . . . . . . . . . V - - 0.3V to V + + 0.3V  
Ambient Operating Temperature . . . . . . . . . . . . . . . .-45°C to +85°C  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C  
Maximum Die Junction Temperature . . . . . . . . . . . . . . . . . . . +150°C  
S
S
S
S
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests  
are at the specified temperature and are pulsed tests, therefore: T = T = T  
A
J
C
Electrical Specifications  
V
= ±5V, T = 25°C, R = 180, R = 20, R = 500unless otherwise specified.  
S
A
F
G
L
PARAMETER  
DESCRIPTION  
CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
DC PERFORMANCE  
V
Input Offset Voltage (SO8)  
0.2  
2
3
mV  
mV  
OS  
Input Offset Voltage (SOT23-5)  
Offset Voltage Temperature Coefficient  
Input Bias Current  
T
1.8  
-22  
µV/°C  
µA  
CVOS  
I
I
-30  
B
Input Bias Current Offset  
0.4  
2
µA  
OS  
T
Input Bias Current Temperature  
Coefficient  
0.09  
µA/°C  
CIB  
C
Input Capacitance  
Open Loop Gain  
2.2  
87  
97  
pF  
dB  
dB  
IN  
A
80  
80  
VOL  
PSRR  
Power Supply Rejection Ratio  
(Note 1)  
CMRR  
CMIR  
Common Mode Rejection Ratio  
Common Mode Input Range  
Output Voltage Swing High  
Output Voltage Swing Low  
Output Voltage Swing High  
Output Voltage Swing Low  
Output Short Circuit Current (Note 2)  
Supply Current  
at CMIR  
80  
-4.6  
3.5  
106  
dB  
V
3.8  
-3.7  
-3  
V
V
V
V
No load, R = 1kΩ  
3.65  
-3.87  
3.3  
V
OUTH  
OUTL  
OUTH2  
OUTL2  
OUT  
F
No load, R = 1kΩ  
V
F
R
R
= 100Ω  
= 100Ω  
3
V
L
L
-3.5  
100  
V
I
I
80  
mA  
mA  
10.1  
11  
S
AC PERFORMANCE - R = 20, C = 5pF  
G
L
BW  
-3dB Bandwidth  
175  
34  
MHz  
MHz  
MHz  
dB  
BW ±0.1dB  
BW ±1dB  
Peaking  
SR  
±0.1dB Bandwidth  
±1dB Bandwidth  
Peaking  
150  
0.4  
185  
0.6  
2.7  
42  
Slew Rate  
V
= 2V  
, measured at 20% to 80%  
P-P  
150  
V/µs  
%
OUT  
OS  
Overshoot, 4V  
Output Square Wave Positive  
Negative  
P-P  
%
t
Settling Time to 0.1% of ±1V Pulse  
Voltage Noise Spectral Density  
ns  
S
V
10kHz  
0.83  
nV/Hz  
N
FN7045.2  
2
April 21, 2005  

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