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EL2125CW-T7 PDF预览

EL2125CW-T7

更新时间： 2024-01-22 04:09:12
品牌 Logo 应用领域
英特矽尔 - INTERSIL 放大器光电二极管局域网
页数 文件大小 规格书
15页 401K
描述
Ultra-Low Noise, Low Power, Wideband Amplifier

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EL2125CW-T7 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：SOT-23包装说明：SOT-23, 5 PIN
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.74Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
标称共模抑制比：106 dB频率补偿：YES
最大输入失调电压：3000 µVJESD-30 代码：R-PDSO-G5
JESD-609代码：e0长度：2.9 mm
低-偏置：NO低-失调：NO
微功率：NO湿度敏感等级：1
负供电电压上限：-16.5 V标称负供电电压 (Vsup)：-5 V
功能数量：1端子数量：5
最高工作温度：85 °C最低工作温度：-45 °C
封装主体材料：PLASTIC/EPOXY封装代码：LSSOP
封装等效代码：TSOP5/6,.11,37封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：240
功率：NO电源：+-5/+-15 V
可编程功率：NO认证状态：Not Qualified
座面最大高度：1.45 mm最小摆率：150 V/us
标称压摆率：185 V/us子类别：Operational Amplifiers
最大压摆率：12 mA供电电压上限：16.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：BIPOLAR温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.95 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：150000 kHz
最小电压增益：10000宽带：YES
宽度：1.6 mmBase Number Matches：1

EL2125CW-T7 数据手册

 浏览型号EL2125CW-T7的Datasheet PDF文件第9页浏览型号EL2125CW-T7的Datasheet PDF文件第10页浏览型号EL2125CW-T7的Datasheet PDF文件第11页浏览型号EL2125CW-T7的Datasheet PDF文件第12页浏览型号EL2125CW-T7的Datasheet PDF文件第14页浏览型号EL2125CW-T7的Datasheet PDF文件第15页 
EL2125  
Pin Descriptions  
5-PIN SOT-23  
8-PIN SO  
PIN NAME  
PIN FUNCTION  
EQUIVALENT CIRCUIT  
1
6
VOUT  
Output  
V +  
S
V
OUT  
CIRCUIT 1  
2
3
4
3
VS-  
Supply  
Input  
VINA+  
V +  
S
V
+
V -  
IN  
IN  
V -  
S
CIRCUIT 2  
4
5
2
7
VINA-  
VS+  
Input  
Reference Circuit 2  
Supply  
compensation, the device can also operate at lower gain  
settings. The RC network shown in Figure 50 reduces the  
feedback gain at high frequency and thus maintains the  
amplifier stability. R values must be less than RF divided by  
9 and 1 divided by 2πRC must be less than 400MHz.  
Applications Information  
Product Description  
The EL2125 is an ultra-low noise, wideband monolithic  
operational amplifier built on Elantec's proprietary high  
speed complementary bipolar process. It features  
R
F
0.83nV/√Hz input voltage noise, 200µV offset voltage, and  
73dB THD. It is intended for use in systems such as  
ultrasound imaging where very small signals are needed to  
be amplified. The EL2125 also has excellent DC  
R
-
+
V
OUT  
C
V
IN  
specifications: 200µV V , 22µA IB, 0.4µA I , and 106dB  
OS  
OS  
FIGURE 50.  
CMRR. These specifications allow the EL2125 to be used in  
DC-sensitive applications such as difference amplifiers.  
Choice of Feedback Resistor, RF  
The feedback resistor forms a pole with the input  
Gain-Bandwidth Product  
capacitance. As this pole becomes larger, phase margin is  
reduced. This increases ringing in the time domain and  
peaking in the frequency domain. Therefore, RF has some  
maximum value which should not be exceeded for optimum  
performance. If a large value of RF must be used, a small  
capacitor in the few pF range in parallel with RF can help to  
reduce this ringing and peaking at the expense of reducing  
the bandwidth. Frequency response curves for various RF  
values are shown the in typical performance curves section  
of this data sheet.  
The EL2125 has a gain-bandwidth product of 800MHz at  
±5V. For gains greater than 20, its closed-loop -3dB  
bandwidth is approximately equal to the gain-bandwidth  
product divided by the small signal gain of the circuit. For  
gains less than 20, higher-order poles in the amplifier's  
transfer function contribute to even higher closed-loop  
bandwidths. For example, the EL2125 has a -3dB bandwidth  
of 175MHz at a gain of 10 and decreases to 40MHz at gain  
of 20. It is important to note that the extra bandwidth at lower  
gain does not come at the expenses of stability. Even though  
the EL2125 is designed for gain > 10 with external  
FN7045.2  
13  
April 21, 2005  
1...101112131415

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