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EL2075 PDF预览

EL2075

更新时间: 2024-01-17 20:24:11
品牌 Logo 应用领域
ELANTEC 运算放大器
页数 文件大小 规格书
11页 466K
描述
2GHz GBWP Gain-of-10 Stable Operational Amplifier

EL2075 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SO-8Reach Compliance Code:unknown
风险等级:5.77放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):6 µA
25C 时的最大偏置电流 (IIB):6 µA最小共模抑制比:70 dB
标称共模抑制比:90 dB频率补偿:YES (AVCL>=10)
最大输入失调电压:1000 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e0低-失调:NO
负供电电压上限:-7 V标称负供电电压 (Vsup):-5 V
功能数量:1端子数量:8
最高工作温度:75 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE电源:+-5 V
认证状态:Not Qualified最小摆率:0.001 V/us
标称压摆率:800 V/us子类别:Operational Amplifier
最大压摆率:25 mA供电电压上限:7 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:BIPOLAR温度等级:COMMERCIAL EXTENDED
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
标称均一增益带宽:2000000 kHz最小电压增益:800
宽带:YESBase Number Matches:1

EL2075 数据手册

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EL2075C  
2GHz GBWP Gain-of-10 Stable Operational Amplifier  
Applications Information  
choice for RF and IF applications. Furthermore, the cur-  
Product Description  
rent drive of the EL2075C remains a minimum of 50mA  
at low temperatures. The EL2075C is current-limited at  
the output, allowing it to withstand momentary shorts to  
ground. However, power dissipation with the output  
shorted can be in excess of the power-dissipation capa-  
bilities of the package.  
The EL2075C is a wideband monolithic operational  
amplifier built on a high-speed complementary bipolar  
process. The EL2075C uses a classical voltage-feedback  
topology which allows it to be used in a variety of appli-  
cations requiring a noise gain ³ 10 where current-  
feedback amplifiers are not appropriate because of  
restrictions placed upon the feedback element used with  
the amplifier. The conventional topology of the  
EL2075C allows, for example, a capacitor to be placed  
in the feedback path, making it an excellent choice for  
applications such as active filters, sample-and-holds, or  
integrators. Similarly, because of the ability to use  
diodes in the feedback network, the EL2075C is an  
excellent choice for applications such as log amplifiers.  
Capacitive Loads  
Although the EL2075C has been optimized to drive  
resistive loads as low as 50W, capacitive loads will  
decrease the amplifier's phase margin which may result  
in peaking, overshoot, and possible oscillation. For opti-  
mum AC performance, capacitive loads should be  
reduced as much as possible or isolated via a series out-  
put resistor. Coax lines can be driven, as long as they are  
terminated with their characteristic impedance. When  
properly terminated, the capacitance of coaxial cable  
will not add to the capacitive load seen by the amplifier.  
Capacitive loads greater than 10pF should be buffered  
with a series resistor (Rs) to isolate the load capacitance  
from the amplifier output. A curve of recommended Rs  
vs Cload has been included for reference. Values of Rs  
were chosen to maximize resulting bandwidth without  
additional peaking.  
The EL2075C also has excellent DC specifications:  
200µV, VOS, 2µA IB, 0.1µA IOS, and 90dB of CMRR.  
These specifications allow the EL2075C to be used in  
DC-sensitive applications such as difference amplifiers.  
Furthermore, the current noise of the EL2075C is only  
3.2 pA/ÖHz, making it an excellent choice for high-sen-  
sitivity transimpedance amplifier configurations.  
Gain-Bandwidth Product  
The EL2075C has a gain-bandwidth product of 2GHz.  
For gains greater than 40, its closed-loop -3dB bandwidth  
is approximately equal to the gain-bandwidth product  
divided by the noise gain of the circuit. For gains less  
than 40, higher-order poles in the amplifier's transfer  
function contribute to even higher closed loop band-  
widths. For example, the EL2075C has a -3dB bandwidth  
of 400MHz at a gain of +10, dropping to 200MHz at a  
gain of +20. It is important to note that the EL2075C has  
been designed so that this “extra” bandwidth in low-gain  
applications does not come at the expense of stability. As  
seen in the typical performance curves, the EL2075C in a  
gain of +10 only exhibits 1.5dB of peaking with a 100W  
load.  
Printed-Circuit Layout  
As with any high-frequency device, good PCB layout is  
necessary for optimum performance. Ground-plane con-  
struction is highly recommended, as is good power  
supply bypassing. A 1µF–10µF tantalum capacitor is  
recommended in parallel with a 0.01µF ceramic capaci-  
tor. All lead lengths should be as short as possible, and  
all bypass capacitors should be as close to the device  
pins as possible. Parasitic capacitances should be kept to  
an absolute minimum at both inputs and at the output.  
Resistor values should be kept under 1000W to 2000W  
because of the RC time constants associated with the  
parasitic capacitance. Metal-film and carbon resistors  
are both acceptable, use of wire-wound resistors is not  
recommended because of parasitic inductance. Simi-  
larly, capacitors should be low-inductance for best  
performance. If possible, solder the EL2075C directly to  
the PC board without a socket. Even high quality sockets  
Output Drive Capability  
The EL2075C has been optimized to drive 50W and 75W  
loads. It can easily drive 6VPP into a 50W load. This high  
output drive capability makes the EL2075C an ideal  
8

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