Datasheet > EIA1415A-2P

EIA1415A-2P

更新时间： 2022-12-18 00:31:42

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
1页	46K
描述
14.0-15.35GHz, 2W Internally Matched Power FET

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EIA1415A-2P 数据手册

Excelics

EIA1415A-2P

Not recommended for new designs. Contact factory. Effective 03/2003

14.0-15.35GHz, 2W Internally Matched Power FET

14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT

IMPEDANCE MATCHED TO 50 OHM

HIGH PAE( 25% TYPICAL)

+33.0 TYPICAL P_1dBOUTPUT POWER

7.5dB TYPICAL G_1dBPOWER GAIN

NON-HERMETIC METAL FLANGE PACKAGE

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

EIA1415-2P

TYP

SYMBOLS

PARAMETERS/TEST CONDITIONS

UNIT

dBm

MIN

MAX

Output Power at 1dB Compression

f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss

32.0

33.0

P_1dB

G_1dB

PAE

Id_1dB

IP3

Gain at 1dB Compression

f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss

6.5

7.5

Power Added Efficiency at 1dB compression

f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss

Drain Current at 1dB Compression

900

Output 3^rdOrder Intercept Point

f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss

dBm

Saturated Drain Current Vds=3V, Vgs=0V

1100

-13

1440

1500

-1.0

-15

1700

-2.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=12mA

Drain Breakdown Voltage Igd=4.8mA

BVgd

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

-3V

Idss

Igsf

Tch

Tstg

Forward Gate Current

Input Power

180mA

32dBm

175^oC

-65/175^oC

17W

30mA

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

14.2W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085

Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com

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