EIA1616-8P-2
UPDATED 11/09/06
16.2-16.4GHz 8-Watt Internally Matched Power FET
FEATURES
•
•
•
•
•
•
•
16.2– 16.4GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
6.0 dB Min. Power Gain at 1dB Compression
30% Power Added Efficiency
EIA1616-8P-2
Non-Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
UNITS
Output Power at 1dB Compression
VDS = 8 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
DS = 8 V, IDSQ ≈ 2200mA
f = 16.2-16.4GHz
f = 16.2-16.4GHz
f = 16.2-16.4GHz
38.0
39.0
dBm
6.0
7.0
dB
dB
%
G1dB
∆G
V
Gain Flatness
±0.6
VDS = 8 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
30
PAE
V
DS = 8 V, IDSQ ≈ 2200mA
f = 16.2-16.4GHz
Drain Current at 1dB Compression
f = 16.2-16.4GHz
2600
4000
-1.0
3.5
3200
6000
-2.5
4.0
mA
mA
V
Id1dB
IDSS
VP
Saturated Drain Current
Pinch-off Voltage
VDS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 40 mA
Thermal Resistance2
oC/W
RTH
Note:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
Vds
Vgs
Igf
PARAMETERS
Drain-Source Voltage
ABSOLUTE1
CONTINUOUS2
8V
-3V
10V
-5V
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
86.4mA
-14.4mA
38 dBm
175 oC
28.8mA
-4.8mA
Igr
@ 3dB Compression
175 oC
Pin
Channel Temperature
Storage Temperature
Total Power Dissipation
Tch
Tstg
Pt
-65 to +175 oC
-65 to +175 oC
38W
38W
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package,
and PT = (VDS * IDS) – (POUT – PIN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised November 2006