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EGP30G-BP PDF预览

EGP30G-BP

更新时间: 2024-02-23 13:58:08
品牌 Logo 应用领域
美微科 - MCC 整流二极管高效整流二极管局域网超快恢复二极管快速恢复二极管
页数 文件大小 规格书
3页 84K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

EGP30G-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-201AE
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.61
其他特性:LOW LEAKAGE CURRENT应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201AEJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向恢复时间:0.075 µs表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

EGP30G-BP 数据手册

 浏览型号EGP30G-BP的Datasheet PDF文件第2页浏览型号EGP30G-BP的Datasheet PDF文件第3页 
M C C  
EGP30A  
THRU  
EGP30K  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
3.0 Amp Glass  
Passivated High  
Efficient Rectifiers  
50 to 800 Volts  
·
·
·
·
Superfast recovery time for high efficiency  
Glass passivated cavity-free junction, Plastic case  
Low forward voltage, high current capability  
Low leakage current  
Maximum Ratings  
·
·
·
Operating Temperature: -55OC to +150OC  
DO-201AE  
Storage Temperature: -55OC to +150OC  
Typical Thermal Resistance: 20OC/W Junction to Ambient  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum DC  
Blocking  
Voltage  
MCC  
Part Number  
Maximum  
RMS Voltage  
D
EGP30A  
EGP30B  
EGP30D  
EGP30F  
EGP30G  
EGP30J  
EGP30K  
50V  
35V  
70V  
50V  
100V  
200V  
300V  
400V  
600V  
800V  
100V  
200V  
300V  
400V  
600V  
800V  
140V  
210V  
280V  
420V  
560V  
A
Cathode  
Mark  
B
Electrical Characteristics @ 25OC Unless Otherwise Specified  
D
Maximum Average  
Forward Current  
IF(AV)  
3.0 A  
T = 55OC  
A
Peak Forward Surge  
Current  
IFSM  
125A  
8.3ms, half sine  
C
Maximum  
Instantaneous  
Forward Voltage  
EGP30A-30D  
EGP30F-30G  
EGP30J-30K  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
DIMENSIONS  
VF  
0.95V  
1.25V  
1.70V  
I =3.0A  
F
T =25OC  
A
INCHES  
MIN  
---  
MM  
MIN  
DIM  
A
MAX  
.370  
.250  
.042  
---  
MAX  
9.50  
6.40  
1.06  
---  
NOTE  
---  
---  
B
C
---  
.038  
1.000  
IR  
5.0uA  
T =25OC  
0.96  
25.40  
A
D
100uA T =125OC  
A
Reverse Recovery  
Time  
T =25OC  
A
EGP30A-30G  
EGP30J-30K  
T
rr  
50nS I =0.5A, IR=1.0A,  
F
75nS I =0.25A  
rr  
Typical Junction  
Capacitance  
EGP30A-30D  
EGP30F-30K  
Measured at  
f=1.0MHz  
VR=4.0V  
CJ  
95pF  
75pF  
www.mccsemi.com  

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