Datasheet > EGP30G

EGP30G

更新时间： 2024-09-30 22:40:43

品牌	Logo	应用领域
威世 - VISHAY		二极管局域网超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	74K
描述
GLASS PASSIVATED FAST EFFICIENT RECTIFIER

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中文翻译

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技术参数
数据手册

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EGP30G 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.82
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.3 V	JESD-609代码：	e0
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	3 A	最大重复峰值反向电压：	400 V
最大反向恢复时间：	0.05 µs	子类别：	Rectifier Diodes
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

EGP30G 数据手册

EGP30A THRU EGP30G

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Forward Voltage - 50 to 400 Volts

Reverse Current - 3.0 Amperes

Case Style GP20

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Glass passivated cavity-free junction

♦ Superfast recovery time for high efficiency

♦ Low forward voltage,

1.0 (25.4)

MIN.

0.210 (5.3)

high current capability

♦ Low leakage current

0.190 (4.8)

DIA.

♦ High surge current capability

0.375 (9.5)

0.285 (7.2)

♦ High temperature metallurgically bonded construction

♦ High temperature soldering guaranteed:

300°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.042 (1.07)

MECHANICAL DATA

Case: Molded plastic over solid glass body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

0.037 (0.94)

DIA.

Dimensions in inches and (millimeters)

Glass-plastic encapsulation technique is covered by

Patent No.3,996,602 and brazed-lead assembly by Patent No. 3,930,306

Weight: 0.03 ounce, 0.8 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

EGP

30A

EGP

30B

EGP

30C

EGP

30D

EGP

30F

EGP

30G

SYMBOLS

V_RRM

V_RMS

V_DC

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

150

105

150

200

140

200

300

210

300

400 Volts

280 Volts

400 Volts

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=55°C

I_(AV)

3.0

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load

I_FSM

V_F

125.0

Amps

Volts

Maximum instantaneous forward voltage at 3.0A

0.95

1.25

Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=125°C

5.0

100.0

I_R

trr

C_J

µA

Typical reverse recovery time _{(NOTE 1)}

Typical junction capacitance _{(NOTE 2)}

Typical thermal resistance _{(NOTE 3)}

50.0

95.0

75.0

R_ΘJA

R_ΘJL

20.0

8.0

°C/W

°C

Operating junction and storage temperature range

T_J,T_STG

-65 to +150

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, Irr=0.25A

(2) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted

4/98

中文翻译

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与EGP30G相关器件

型号	品牌	获取价格	描述	数据表
EGP30G/4E	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP30G/4F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP30G/4H	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP30G/53	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP30G/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP30G/58	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP30G/62	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP30G/64	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP30G/66	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP30G/71	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN

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