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EFC4606 PDF预览

EFC4606

更新时间: 2024-01-25 06:18:38
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管通用开关
页数 文件大小 规格书
6页 124K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

EFC4606 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.76FET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:DEPLETION MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.6 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

EFC4606 数据手册

 浏览型号EFC4606的Datasheet PDF文件第1页浏览型号EFC4606的Datasheet PDF文件第2页浏览型号EFC4606的Datasheet PDF文件第4页浏览型号EFC4606的Datasheet PDF文件第5页浏览型号EFC4606的Datasheet PDF文件第6页 
EFC4606  
Test Circuits are example of measuring FET1 side  
Test Circuit 1  
Test Circuit 2  
V
/ I  
I
(+) / (--)  
SSS SSS  
GSS  
S2  
S2  
G2  
G1  
G2  
G1  
S1  
S2  
S1  
S2  
IT11565  
IT11566  
Test Circuit 3  
(off)  
Test Circuit 4  
yfs⏐  
V
GS  
G2  
G2  
G1  
10V 1mA  
G1  
S1  
S2  
S1  
S2  
IT11567  
IT11568  
Test Circuit 5  
(on)  
Test Circuit 6  
V (S-S)  
F
R
SS  
4.5V  
G2  
G2  
G1  
G1  
S1  
S1  
IT11569  
IT11570  
Test Circuit 7  
t (on), t , t (off), t  
f
d
r d  
V
=10V  
I =3A  
S
DD  
R =3.33Ω  
L
V
OUT  
S1  
V
IN  
G1  
G2  
PW=10μs  
D.C.1%  
* Note: Connect the mesurement terminal reversely  
if you want to measure the FET2 side.  
S2  
IT11571  
No. A1177-3/6  

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