生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.57 | 最长访问时间: | 45 ns |
JESD-30 代码: | R-CZIP-T32 | 内存密度: | 4194304 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 512KX8 | 输出特性: | 3-STATE |
可输出: | YES | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | THROUGH-HOLE | 端子位置: | ZIG-ZAG |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88512CA45NI | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32 | |
EDI88512CA45NI | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32 | |
EDI88512CA45NM | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA45TB | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 45ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA45TC | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA45TI | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 45ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA45TI | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 45ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA45TM | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA55B32B | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 55ns, CMOS, CDSO32, CERAMIC, DFP-32 | |
EDI88512CA55B32C | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 55ns, CMOS, CDSO32, CERAMIC, DFP-32 |