生命周期: | Obsolete | 包装说明: | THIN, CERAMIC, FP-32 |
Reach Compliance Code: | unknown | 风险等级: | 5.57 |
最长访问时间: | 55 ns | JESD-30 代码: | R-CDSO-G32 |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88512CA55B32M | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 55ns, CMOS, CDSO32, CERAMIC, DFP-32 | |
EDI88512CA55CB | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA55CC | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA55CI | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA55CI | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA55CM | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA55F32B | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 55ns, CMOS, CDFP32, CERAMIC, DFP-32 | |
EDI88512CA55F32C | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA55F32I | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 55ns, CMOS, CDFP32, CERAMIC, DFP-32 | |
EDI88512CA55F32M | ETC |
获取价格 |
x8 SRAM |