5秒后页面跳转
EBE21AE8ACFA PDF预览

EBE21AE8ACFA

更新时间: 2022-12-28 03:16:22
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
27页 231K
描述
2GB Registered DDR2 SDRAM DIMM

EBE21AE8ACFA 数据手册

 浏览型号EBE21AE8ACFA的Datasheet PDF文件第7页浏览型号EBE21AE8ACFA的Datasheet PDF文件第8页浏览型号EBE21AE8ACFA的Datasheet PDF文件第9页浏览型号EBE21AE8ACFA的Datasheet PDF文件第11页浏览型号EBE21AE8ACFA的Datasheet PDF文件第12页浏览型号EBE21AE8ACFA的Datasheet PDF文件第13页 
EBE21AE8ACFA  
Electrical Specifications  
All voltages are referenced to VSS (GND).  
Absolute Maximum Ratings  
Parameter  
Symbol  
VT  
Value  
Unit  
Notes  
1
Voltage on any pin relative to VSS  
Supply voltage relative to VSS  
Short circuit output current  
Power dissipation  
–0.5 to +2.3  
–0.5 to +2.3  
50  
V
VDD  
IOS  
PD  
V
mA  
W
°C  
°C  
1
18  
Operating case temperature  
Storage temperature  
TC  
0 to +95  
–55 to +100  
1, 2  
1
Tstg  
Notes: 1. DDR2 SDRAM component specification.  
2. Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in  
frequency to a 32ms period (tREFI = 3.9µs) and higher temperature self-refresh entry via the control of  
EMRS (2) bit A7 is required.  
Caution  
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause  
permanent damage. The device is not meant to be operated under conditions outside the limits  
described in the operational section of this specification. Exposure to Absolute Maximum Rating  
conditions for extended periods may affect device reliability.  
DC Operating Conditions (TC = 0°C to +85°C) (DDR2 SDRAM Component Specification)  
Parameter  
Symbol  
VDD, VDDQ  
VSS  
min.  
typ.  
1.8  
0
max.  
1.9  
0
Unit  
V
Notes  
4
Supply voltage  
1.7  
0
V
VDDSPD  
VREF  
1.7  
3.6  
V
Input reference voltage  
Termination voltage  
DC input logic high  
DC input low  
0.49 × VDDQ  
VREF 0.04  
VREF + 0.125  
0.3  
0.50 × VDDQ 0.51 × VDDQ  
V
1, 2  
3
VTT  
VREF  
VREF + 0.04  
VDDQ + 0.3  
VREF – 0.125  
V
VIH (DC)  
VIL (DC)  
VIH (AC)  
VIL (AC)  
V
V
AC input logic high  
AC input low  
VREF + 0.200  
V
VREF – 0.200  
V
Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically  
the value of VREF is expected to be about 0.5 × VDDQ of the transmitting device and VREF are expected  
to track variations in VDDQ.  
2. Peak to peak AC noise on VREF may not exceed ±2% VREF (DC).  
3. VTT of transmitting device must track VREF of receiving device.  
4. VDDQ must be equal to VDD.  
Data Sheet E1199E10 (Ver. 1.0)  
10  

与EBE21AE8ACFA相关器件

型号 品牌 描述 获取价格 数据表
EBE21AE8ACFA-6E-E ELPIDA 2GB Registered DDR2 SDRAM DIMM

获取价格

EBE21AE8ACWA ELPIDA 2GB Registered DDR2 SDRAM DIMM

获取价格

EBE21AE8ACWA-6E-E ELPIDA 2GB Registered DDR2 SDRAM DIMM

获取价格

EBE21EE8ABFA ELPIDA 2GB Unbuffered DDR2 SDRAM DIMM

获取价格

EBE21EE8ABFA-4A-E ELPIDA 2GB Unbuffered DDR2 SDRAM DIMM

获取价格

EBE21EE8ABFA-5C-E ELPIDA 2GB Unbuffered DDR2 SDRAM DIMM

获取价格