Datasheet > EBD52UC8AAFA

EBD52UC8AAFA

更新时间： 2022-12-22 00:38:55

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
18页	180K
描述
512MB Unbuffered DDR SDRAM DIMM

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EBD52UC8AAFA 数据手册

EBD52UC8AAFA

CAUTION FOR HANDLING MEMORY MODULES

When handling or inserting memory modules, be sure not to touch any components on the modules, such as

the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on

these components to prevent damaging them.

In particular, do not push module cover or drop the modules in order to protect from mechanical defects,

which would be electrical defects.

When re-packing memory modules, be sure the modules are not touching each other.

Modules in contact with other modules may cause excessive mechanical stress, which may damage the

modules.

MDE0202

NOTES FOR CMOS DEVICES

PRECAUTION AGAINST ESD FOR MOS DEVICES

Exposing the MOS devices to a strong electric field can cause destruction of the gate

oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop

generation of static electricity as much as possible, and quickly dissipate it, when once

it has occurred. Environmental control must be adequate. When it is dry, humidifier

should be used. It is recommended to avoid using insulators that easily build static

electricity. MOS devices must be stored and transported in an anti-static container,

static shielding bag or conductive material. All test and measurement tools including

work bench and floor should be grounded. The operator should be grounded using

wrist strap. MOS devices must not be touched with bare hands. Similar precautions

need to be taken for PW boards with semiconductor MOS devices on it.

HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES

No connection for CMOS devices input pins can be a cause of malfunction. If no

connection is provided to the input pins, it is possible that an internal input level may be

generated due to noise, etc., hence causing malfunction. CMOS devices behave

differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed

high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected

to V^DDor GND with a resistor, if it is considered to have a possibility of being an output

pin. The unused pins must be handled in accordance with the related specifications.

STATUS BEFORE INITIALIZATION OF MOS DEVICES

Power-on does not necessarily define initial status of MOS devices. Production process

of MOS does not define the initial operation status of the device. Immediately after the

power source is turned ON, the MOS devices with reset function have not yet been

initialized. Hence, power-on does not guarantee output pin levels, I/O settings or

contents of registers. MOS devices are not initialized until the reset signal is received.

Reset operation must be executed immediately after power-on for MOS devices having

reset function.

CME0107

Data Sheet E0362E20 (Ver. 2.0)

1...14 15 161718

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