Datasheet > 存储 > DRAM> EBD25UC8AKFA-5B

EBD25UC8AKFA-5B

更新时间： 2024-01-09 06:04:47

品牌	Logo	应用领域
尔必达 - ELPIDA		存储内存集成电路动态存储器双倍数据速率时钟
页数	文件大小	规格书
19页	152K
描述
256MB Unbuffered DDR SDRAM DIMM (32M words X 64 bits, 1 Rank)

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技术参数
数据手册

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EBD25UC8AKFA-5B 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DIMM	包装说明：	DIMM, DIMM184
针数：	184	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.36
风险等级：	5.84	Is Samacsys：	N
访问模式：	SINGLE BANK PAGE BURST	最长访问时间：	0.7 ns
其他特性：	AUTO/SELF REFRESH	最大时钟频率 (fCLK)：	200 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-XDMA-N184
内存密度：	2147483648 bit	内存集成电路类型：	DDR DRAM MODULE
内存宽度：	64	功能数量：	1
端口数量：	1	端子数量：	184
字数：	33554432 words	字数代码：	32000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	32MX64
输出特性：	3-STATE	封装主体材料：	UNSPECIFIED
封装代码：	DIMM	封装等效代码：	DIMM184
封装形状：	RECTANGULAR	封装形式：	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）：	260	电源：	2.6 V
认证状态：	Not Qualified	刷新周期：	8192
自我刷新：	YES	子类别：	DRAMs
最大压摆率：	2.56 mA	最大供电电压 (Vsup)：	2.7 V
最小供电电压 (Vsup)：	2.5 V	标称供电电压 (Vsup)：	2.6 V
表面贴装：	NO	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	NO LEAD
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

EBD25UC8AKFA-5B 数据手册

EBD25UC8AKFA-5

-5B

-5C

Parameter

Symbol

tRFC

min.

max.

—

min.

max.

—

Unit

Notes

Auto refresh to Active/Auto refresh

command period

Active to Read/Write delay

Precharge to active command period

Active to Autoprecharge delay

Active to active command period

Write recovery time

tRCD

tRP

—

tRAP

tRRD

tWR

tRCD min.

Auto precharge write recovery and

precharge time

(tWR/tCK)+

(tRP/tCK)

(tWR/tCK)+

(tRP/tCK)

tDAL

—

tCK

Internal write to Read command delay

tWTR

tREF

—

tCK

µs

Average periodic refresh interval

—

7.8

—

7.8

Notes: 1. All the AC parameters listed in this data sheet is component specifications. For AC testing conditions,

refer to the corresponding component data sheet.

2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal

transition is defined to occur when the signal level crossing VTT.

3. The timing reference level is VTT.

4. Output valid window is defined to be the period between two successive transition of data out or DQS

(read) signals. The signal transition is defined to occur when the signal level crossing VTT.

5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The

timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage

level, but specify when the device output stops driving.

6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This

parameter is not referred to a specific DOUT voltage level, but specify when the device output begins

driving.

7. Input valid windows is defined to be the period between two successive transition of data input or DQS

(write) signals. The signal transition is defined to occur when the signal level crossing VREF.

8. The timing reference level is VREF.

9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific

reference voltage to judge this transition is not given.

10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not

assured.

11. tCK = tCK (min) when these parameters are measured. Otherwise, absolute minimum values of these

values are 10% of tCK.

12. VDD is assumed to be 2.6V ± 0.1V. VDD power supply variation per cycle expected to be less than

0.4V/400 cycle.

13. tDAL = (tWR/tCK)+(tRP/tCK)

For each of the terms above, if not already an integer, round to the next highest integer.

Example: For –5C Speed at CL = 3, tCK = 5ns, tWR = 15ns and tRP= 18ns,

tDAL = (15ns/5ns) + (18ns/5ns) = (3) + (4)

tDAL = 7 clocks

Preliminary Data Sheet E0353E30 (Ver. 3.0)

1...10 11 121314 15 16...19

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与EBD25UC8AKFA-5B相关器件

型号	品牌	描述	获取价格	数据表
EBD25UC8AKFA-5B-E	ELPIDA	256MB Unbuffered DDR SDRAM DIMM (32M words X 64 bits, 1 Rank)	获取价格
EBD25UC8AKFA-5C	ELPIDA	256MB Unbuffered DDR SDRAM DIMM (32M words X 64 bits, 1 Rank)	获取价格
EBD25UC8AKFA-5C-E	ELPIDA	256MB Unbuffered DDR SDRAM DIMM (32M words X 64 bits, 1 Rank)	获取价格
EBD25UC8AKFA-5-E	ELPIDA	256MB Unbuffered DDR SDRAM DIMM (32M words X 64 bits, 1 Rank)	获取价格
EBD25UC8AKFA-6B	ELPIDA	DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184	获取价格
EBD25UC8AKFA-6B-E	ELPIDA	DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184	获取价格

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