Datasheet > E3V3VUPZ8A-AH

E3V3VUPZ8A-AH

更新时间： 2023-12-06 20:11:41

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	211K
描述
静电保护二极管

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数据手册

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E3V3VUPZ8A-AH 数据手册

E3V3VUPZ8A-AH

ESD Protection Diode

Features

• AEC-Q101 Qualified

• Protects eight high-speed lines

• Low ESD clamping voltage

• Halogen and Antimony Free(HAF),

RoHS compliant

1.I/O 2.I/O 3.GND 4. I/O 5. I/O 6. I/O

7. I/O 8. I/O 9. I/O

DFN3810-9 Plastic package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

IEC61000-4-2 (ESD)

I_PP

Air

Contact

± 20

± 18

V_ESD

Operation Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

3.3

Unit

Reverse Stand-Off Voltage, Any I/O to Gnd

Punch-Through Voltage

at I_PT= 2 μA , Any I/O to Gnd

V_PT

V_F

I_R

3.8

Forward Clamping Voltage

at I_F= 10 mA , Gnd to I/O

Reverse Current

0.5

μA

at V_RWM= 3.3 V, Any I/O to Gnd

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs, Any I/O to Gnd

at I_PP= 5 A, tp = 8/20 µs, Any I/O to Gnd

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

8.7

13.4

Junction Capacitance

at V_R= 0 V, f = 1 MHz, Any I/O to Gnd

at V_R= 0 V, f = 1 MHz, Between I/O pins

C_j

0.7

0.4

Dynamic Resistance ¹⁾

R_dyn

0.4

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A.

1 / 3

Dated: 07/04/2023 Rev : 01

12 3

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