Datasheet > E3V3VUWB1C

E3V3VUWB1C

更新时间： 2023-12-06 20:11:17

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	199K
描述
静电保护二极管

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E3V3VUWB1C 数据手册

E3V3VUWB1C

ESD Protection Diode

PINNING

DESCRIPTION

Cathode

Features

• Very low capacitance

Anode

Top View

Simplified outline SOD-323 (Bend Lead) and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

Air

Contact

± 15

± 8

IEC61000-4-2 (ESD)

V_ESD

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

3.3

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_RWM= 3.3 V

I_R

µA

Forward Voltage

at I_F= 8 mA

V_F

1.2

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs

at I_PP= 5 A, tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 100 ns, tn = 0.2 ns

at I_TLP=16 A, tp = 100 ns, tn = 0.2 ns

V_CL

11.2

19.6

Junction Capacitance

at V_R= 1 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

0.46

0.7

1.2

R_dyn

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16A.

1 / 3

Dated: 27/05/2022 Rev : 02

12 3

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