E3V6UBPD1A
ESD Protection Diode
PINNING
DESCRIPTION
Anode
PIN
1
Features
Anode
2
• Low capacitance
• Low leakage current
1
2
Transparent top view
Simplified outline DFN1006-2B and symbol
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
PPK
Value
38
Unit
W
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
IEC61000-4-2 (ESD)
IPP
2.5
A
Air
Contact
± 17
± 15
VESD
KV
Operating Junction Temperature Range
Storage Temperature Range
Tj
- 40 to + 125
- 55 to + 150
℃
℃
Tstg
Characteristics at Ta = 25℃
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
3.6
Unit
Reverse Stand-Off Voltage
V
V
Reverse Breakdown Voltage
at IR = 1 mA
V(BR)R
5
-
6.7
Reverse Current
at VRWM = 2.5 V
at VRWM = 3.6 V
IR
-
-
-
-
100
200
nA
V
Clamping Voltage
at IPP = 2.5 A, tp = 8/20 µs
VC
-
-
15
ESD Clamping Voltage
at ITLP = 4 A, tp = 0.2/100 ns
at ITLP =16 A, tp = 0.2/100 ns
VCL
-
-
14.4
27.8
-
-
V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Dynamic Resistance 1)
Cj
-
-
0.21
1.12
0.35
-
pF
Rdyn
Ω
1)
Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .
1 / 3
®
Dated: 02/01/2023 Rev: 02