E2AE THRU E2KE
(T =25℃Unless otherwise specified)
■Electrical Characteristics
a
E2AE E2BE E2CE E2DE E2FE E2GE E2HE E2JE E2KE
PARAMETER
SYMBOL
UNIT TEST CONDITIONS
Maximum instantaneous
forward voltage
VF
trr
V
IFM=2.0A
1.0
1.3
1.7
1.85
Maximum reverse recovery
time
IF=0.5A,IR=1.0A,
Irr=0.25A
ns
35
5.0
100
Tj =25℃
Maximum DC reverse current
at rated DC blocking voltage
IR
μA
Tj =125℃
Measured at 1MHz
Typical junction capacitance
Cj
pF and Applied Reverse
Voltage of 4.0 V.D.C
30
16
12
12
Thermal Characteristics (T =25℃Unless otherwise specified)
■
a
E2AE
E2BE
E2CE
E2DE
E2FE
E2GE
E2HE
E2JE
E2KE
PARAMETER
SYMBOL
UNIT
(1)
RθJ-A
90
Typical Thermal
resistance
℃/W
(1)
RθJ-L
30
Note:
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
Characteristics (Typical)
■
FIG1:Io‐TL Curve
FIG2:Surge Forward Current Capability
2.4
2.0
1.6
1.2
0.8
0.4
0
50
40
30
20
10
0
8.3ms Single Half Sine Wave
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
20
40
60
80
100
120
140
160
Number1o0f Cycles
1
100
Lead Temperature(℃)
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S4879
Rev.1.0,07-Jan-23
www.21yangjie.com