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DXTP07100BFG PDF预览

DXTP07100BFG

更新时间: 2023-12-06 20:11:09
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 781K
描述
PNP, 100V, 2A, PowerDI3333-8

DXTP07100BFG 数据手册

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DXTP07100BFG  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-120  
-100  
-7  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Peak Pulse Current  
-2  
A
-6  
A
ICM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
Unit  
W
(Note 5)  
(Note 6)  
(Note 7)  
(Note 5)  
(Note 6)  
(Note 7)  
0.9  
2.1  
Power Dissipation  
W
PD  
3.1  
W
140  
°C/W  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
65  
RϴJA  
44  
Thermal Resistance, Junction to Leads (Note 8)  
Operating and Storage Temperature Range  
8.5  
RϴJL  
-55 to +175  
TJ, TSTG  
ESD Ratings (Note 9)  
JEDEC Class  
Characteristic  
Electrostatic Discharge—Human Body Model  
Electrostatic Discharge—Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
4000  
400  
Unit  
V
3A  
C
V
Notes:  
5. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady-state.  
6. Same as Note 5, except the device is mounted on 25mm × 25mm 2oz copper.  
7. Same as Note 5, except the device is mounted on 50mm × 50mm 2oz copper.  
8. Thermal resistance from junction to solder-point (at the collector tab).  
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 7  
www.diodes.com  
October 2018  
© Diodes Incorporated  
DXTP07100BFG  
Document Number DS41049 Rev.1 - 2  

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