DXTN3C100PDQ
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
100
100
7
—
—
—
—
—
—
—
—
—
V
V
BVCBO
BVCEO
BVEBO
IC = 100µA
IC = 10mA
—
V
IE = 100µA
—
100
50
nA
µA
nA
nA
VCB = 80V
Collector-Base Cutoff Current
ICBO
—
VCB = 80V @Tj = 150°C
VEB = 7V
Emitter Cutoff Current
—
100
100
IEBO
ICES
Collector-Emitter Cutoff Current
ON CHARACTERISTICS (Note 10)
—
VCES = 80V
150
80
20
10
—
—
—
—
—
—
250
250
100
40
—
—
IC = 500mA, VCE = 10V
IC = 1A, VCE = 10V
IC = 2A, VCE = 10V
IC = 3A, VCE = 10V
IC = 1A, IB = 50mA
IC = 3A, IB = 300mA
IC = 1A, IB = 50mA
IC = 1A, IB = 50mA
IC = 2A, IB = 200mA
IC = 0.1A, VCE = 2V
DC Current Gain
—
hFE
—
—
90
150
330
150
1.0
1.2
0.85
mV
mV
mΩ
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
VCE(sat)
RCE(sat)
VBE(sat)
VBE(on)
225
90
0.86
1.0
V
V
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Delay Time
0.67
—
—
—
—
—
—
—
—
130
11
—
—
—
—
—
—
—
—
MHz
pF
ns
fT
Cobo
td
VCE = 10V, IC = 100mA, f = 100MHz
VCB = 10V, f = 1MHz
40
Rise Time
20
ns
tr
Turn-On Time
60
ns
t(on)
ts
VCC = 12.5V, IC = 1A
IB1 = -IB2 = 0.05A
Storage Time
620
40
ns
Fall Time
ns
tf
Turn-Off Time
660
ns
toff
Note:
10. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%.
4 of 8
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December 2021
© Diodes Incorporated
DXTN3C100PDQ
Document number: DS43548 Rev. 1 - 2