5秒后页面跳转
DUT1505-GG PDF预览

DUT1505-GG

更新时间: 2024-09-26 19:10:43
品牌 Logo 应用领域
MICROSS 功效二极管
页数 文件大小 规格书
6页 489K
描述
Rectifier Diode, 1 Phase, 1 Element, 15A, 500V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE-2

DUT1505-GG 数据手册

 浏览型号DUT1505-GG的Datasheet PDF文件第2页浏览型号DUT1505-GG的Datasheet PDF文件第3页浏览型号DUT1505-GG的Datasheet PDF文件第4页浏览型号DUT1505-GG的Datasheet PDF文件第5页浏览型号DUT1505-GG的Datasheet PDF文件第6页 
August 2009  
Preliminary  
DUT1505 – 500V, 15A  
HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE  
Features  
General Description  
High maximum junction temperature; up to  
+260°C vs. +175°C for silicon diodes  
The DUT1505 is a GaAs P-I-N Rectifier. It uses a  
patented liquid phase epitaxy (LPE) construction  
to provide temperature performance above current  
Silicon, Silicon Carbide and Gallium Nitride  
products of a similar specification. The device is  
able to function stably well above the maximum TJ  
of more traditional diodes of this type while  
maintaining parity of performance in terms of key  
parameters such as recovery time and forward  
voltage.  
Lower and temperature independent  
dynamic recovery characteristics over the  
full specified temperature range  
Lower leakage current at all operating  
temperatures  
Very low capacitance  
Package Types  
Applications  
High temperature electronics  
Power Modules  
Hybrid circuits  
TO-257  
TO-276AB (SMD)  
BARE DIE  
Thermal Characteristics  
SYMBOL  
PARAMETER  
PACKAGE  
TO-276Al  
RATINGS  
UNITS  
°C/W  
°C/W  
°C/W  
RθJC  
RθJC  
RθJC  
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE  
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE  
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE  
3.51  
1.45  
1.24  
TO-257AlN  
TO-276AB  
TO-257Al / TO-257AlN  
TO-276AB  
1
BARE DIE (3.1mm²)  
ORDERING  
PART #  
PACKAGE  
TEMP RANGE  
1
DUT1505AL  
TO-257Al  
-65 TO 260°C  
-65 TO 260°C  
-65 TO 260°C  
-65 TO 260°C  
-65 TO 260°C  
2
3
1
2 3  
1. CATHODE  
2. ANODE  
DUT1505ALN TO-257AlN  
1. ANODE  
2. COMMON CATHODE  
3. COMMON CATHODE  
(DIE BACKSIDE)  
DUT1505S  
TO-276AB  
BARE DIE  
DUT1505-AG  
DUT1505-GG BARE DIE  
Europe: sales@mintech.co.uk  
USA : ussales@mintech.co.uk  
1
2
3
CATHODE  
ANODE  
CATHODE  
China: chinasales@mintech.co.uk  
1
© Mintech Semiconductors Ltd  
Rev. 1.4 7th August 2009  
www.mintech.co.uk  

与DUT1505-GG相关器件

型号 品牌 获取价格 描述 数据表
DUT1505S MICROSS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 500V V(RRM), Gallium Arsenide, TO-276AB, SMD-3
DUT1506-AG MICROSS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE
DUT1506AL MICROSS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, TO-257AA, TO-257A
DUT1506ALN MICROSS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, TO-257AA, TO-257A
DUT1506-GG MICROSS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE
DUT1506S MICROSS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, TO-276AB, SMD-3
DUT1507-AG MICROSS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 700V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE
DUT1507AL MICROSS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 700V V(RRM), Gallium Arsenide, TO-257AA, TO-257A
DUT1507ALN MICROSS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 700V V(RRM), Gallium Arsenide, TO-257AA, TO-257A
DUT1507-GG MICROSS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 700V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE