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DTC014EEB PDF预览

DTC014EEB

更新时间: 2024-01-18 03:36:49
品牌 Logo 应用领域
罗姆 - ROHM 晶体电阻器数字晶体管
页数 文件大小 规格书
3页 293K
描述
100mA/50V Digital transistors(with built-in resistors)

DTC014EEB 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:13 weeks
风险等级:1.66Is Samacsys:N
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

DTC014EEB 数据手册

 浏览型号DTC014EEB的Datasheet PDF文件第2页浏览型号DTC014EEB的Datasheet PDF文件第3页 
100mA/50V Digital transistors(with built-in resistors)  
DTC014EM / DTC014EEB / DTC014EUB  
Features  
Dimensions (Unit : mm)  
1) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external input resistors.  
(See equivalent circuit)  
VMT3  
2) The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
Abbreviated symbol : 40  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
EMT3F  
(3)  
Structure  
(1)  
(2)  
NPN epitaxial planar silicon transistor  
(Resistor built-in type)  
Abbreviated symbol : 40  
2.0  
UMT3F  
0.9  
0.32  
Applications  
(3)  
Inverter, Interface, Driver  
(1)  
(2)  
0.13  
0.65 0.65  
1.3  
Abbreviated symbol : 40  
Packaging specifications  
Equivalent circuit  
Package  
VMT3  
Taping  
T2L  
EMT3F  
Taping  
TL  
UMT3F  
Taping  
TL  
OUT  
GND  
R
1
Packaging Type  
Code  
IN  
Type  
R
2
Basic ordering  
unit (pieces)  
8000  
3000  
3000  
IN  
OUT  
DTC014EM  
DTC014EEB  
DTC014EUB  
-
-
-
-
-
GND  
-
R1=R2=10kΩ  
Absolute maximum (Ta=25C)  
Limits(DTC014E□)  
Parameter  
Symbol  
VCC  
Unit  
M
EB  
50  
UB  
Supply voltage  
Input voltage  
V
V
40  
VIN  
-10  
100  
50  
V
IC(max)  
IO  
Collector current *1  
mA  
mA  
mW  
Output current  
PD  
Power dissipation *2  
150  
200  
Junction temperature  
Tj  
150  
Range of storage temperature  
*1Characteristics of built-in transistor  
*2 Each terminal mounted on a reference land  
Tstg  
-55 to +150  
www.rohm.com  
©2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.A  
1/2  

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