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DTC023JM

更新时间: 2024-11-26 09:58:15
品牌 Logo 应用领域
罗姆 - ROHM 晶体电阻器数字晶体管
页数 文件大小 规格书
3页 288K
描述
100mA/50V Digital transistors(with built-in resistors)

DTC023JM 数据手册

 浏览型号DTC023JM的Datasheet PDF文件第2页浏览型号DTC023JM的Datasheet PDF文件第3页 
100mA/50V Digital transistors(with built-in resistors)  
DTC023JM / DTC023JEB / DTC023JUB  
Features  
Dimensions (Unit : mm)  
1) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external input resistors.  
(See equivalent circuit)  
VMT3  
2) The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
Abbreviated symbol : 46  
EMT3F  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
(3)  
(1)  
(2)  
Structure  
NPN epitaxial planar silicon transistor  
(Resistor built-in type)  
Abbreviated symbol : 46  
2.0  
UMT3F  
0.9  
0.32  
(3)  
Applications  
(1)  
(2)  
Inverter, Interface, Driver  
0.13  
0.65 0.65  
1.3  
Abbreviated symbol : 46  
Packaging specifications and hFE  
Equivalent circuit  
OUT  
GND  
R
1
Package  
VMT3  
Taping  
T2L  
EMT3F  
Taping  
TL  
UMT3F  
Taping  
TL  
IN  
Packaging Type  
Code  
R
2
Type  
Basic ordering  
unit (pieces)  
8000  
3000  
3000  
IN  
OUT  
DTC023JM  
DTC023JEB  
DTC023JUB  
-
-
-
-
-
GND  
-
R1=2.2k,R2=47k  
Absolute maximum (Ta=25C)  
Limits(DTC023J□)  
Parameter  
Symbol  
VCC  
Unit  
M
EB  
50  
UB  
Supply voltage  
Input voltage  
V
V
12  
VIN  
-5  
V
IC(max)  
IO  
Collector current *1  
100  
100  
mA  
mA  
mW  
C  
C  
Output current  
PD  
Power dissipation *2  
150  
200  
Junction temperature  
Tj  
150  
Range of storage temperature  
*1Characteristics of built-in transistor  
*2 Each terminal mounted on a reference land  
Tstg  
-55 to +150  
www.rohm.com  
©2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.A  
1/2  

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