Datasheet > DTA114TUA

DTA114TUA

更新时间： 2024-10-03 06:54:47

品牌	Logo	应用领域
科信 - KEXIN		晶体数字晶体管
页数	文件大小	规格书
2页	127K
描述
Digital Transistors

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中文翻译

获取价格

数据手册

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DTA114TUA 数据手册

SMD Type

Transistors

Digital Transistors

DTA114TUA

Features

PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.)

Built-In Bias Resistors Enable The Configuration of An Inverter

Circuit Without Connecting External Input Resistors

(See Equivalent Circuit).

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-50

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-50

-5

-100

Collector Power Dissipation

Junction temperature

Storage temperature

P^C

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

BV^CBO

BV^CEOIC = -1mA

BV^EBO

I^CBO

Testconditons

Min

-50

-5

Typ

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

IC = -50

IE = -50

VCB = -50V

VEB = -4V

-0.5

-0.3

600

Emitter Cut-off Current

I^EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Input Resistance

V^CE(sat)IC = -10mA , IB = -1mA

h^FE

R¹

VCE = -5V , IC = -1mA

100

250

Transistion Frequency

fT *

VCE = -10V , IE = 5mA , f = 100MHz

250

MHz

* Characteristics of built-in transistor

Marking

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