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DTA114EUAP PDF预览

DTA114EUAP

更新时间: 2024-09-25 21:11:19
品牌 Logo 应用领域
美微科 - MCC 开关光电二极管晶体管
页数 文件大小 规格书
2页 68K
描述
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, SOT-323, 3 PIN

DTA114EUAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.19其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

DTA114EUAP 数据手册

 浏览型号DTA114EUAP的Datasheet PDF文件第2页 
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TM  
DTA114EUA  
Micro Commercial Components  
Features  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors  
The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects.  
Only the on/off conditions need to be set for operation, making  
device design easy  
PNP  
Digital Transistors  
SOT-323  
A
D
Absolute maximum ratings @ 25R  
3
Symbol  
VCC  
VIN  
IO  
IC(MAX)  
Parameter  
Supply voltage  
Input voltage  
Min  
---  
-40  
Typ  
-50  
---  
-50  
-100  
200  
Max  
---  
10  
Unit  
V
V
1: IN  
2: GND  
3: OUT  
C
B
1
2
Output current  
---  
---  
mA  
F
E
Pd  
Tj  
Power dissipation  
Junction temperature  
Storage temperature  
---  
---  
---  
---  
mW  
?
150  
---  
Tstg  
-55  
150  
?
H
G
J
Electrical Characteristics @ 25R  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
IO(off)  
GI  
R1  
Parameter  
Min  
---  
-3.0  
---  
---  
Typ  
---  
---  
---  
---  
---  
---  
10  
1.0  
Max  
-0.5  
---  
-0.3  
-0.88  
-0.5  
---  
Unit  
V
V
K
Input voltage (VCC=-5V, IO=-100IA)  
DIMENSIONS  
(VO=-0.3V, IO=-10mA)  
Output voltage (IO/II=-10mA/-0.5mA  
Input current (VI=-5V)  
V
INCHES  
MAX  
MM  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
mA  
IA  
K=  
.087  
.053  
.087  
Output current (VCC=-50V, VI=0)  
DC current gain (VO=-5V, IO=-5mA)  
Input resistance  
Resistance ratio  
Transition frequency  
---  
30  
7.0  
0.8  
.026 Nominal  
0.65Nominal  
1.20  
.30  
.000  
.90  
.100  
.30  
13  
1.2  
.047  
.012  
.000  
.035  
.004  
.012  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
R2/R1  
F
G
H
J
fT  
---  
250  
---  
MHz  
(VCE=-10V, IE=5mA, f=100MHz)  
K
MARKING: 14  
Suggested Solder  
Pad Layout  
0.70  
0.90  
1.90  
0.65  
0.65  
www.mccsemi .com  
1 of 2  
Revision: 2  
2008/01/01  

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