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DSSK16-01C PDF预览

DSSK16-01C

更新时间: 2024-09-26 19:49:23
品牌 Logo 应用领域
IXYS 局域网二极管
页数 文件大小 规格书
1页 17K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3

DSSK16-01C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
其他特性:LOW NOISE, FREE WHEELING DIODE, HIGH RELIABILITY应用:POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:120 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSSK16-01C 数据手册

  
DSSK 16-01C  
IFAV = 2x8 A  
VRRM = 100 V  
VF = 0.62 V  
Power Schottky Rectifier  
with common cathode  
Preliminary Data  
TO-220 AB  
VRSM  
V
VRRM  
V
Type  
A
C
A
C
A
A
C (TAB)  
D4  
100  
100  
DSSK 16-01C  
A = Anode, C = Cathode , TAB = Cathode  
Symbol  
Test Conditions  
Maximum Ratings  
Features  
• International standard package  
• Very low VF  
• Extremely low switching losses  
• Low IRM-values  
IFRMS  
IFAV  
IFAV  
35  
8
16  
A
A
A
TC = 165°C; rectangular, d = 0.5  
TC = 165°C; rectangular, d = 0.5; per device  
• Epoxy meets UL 94V-0  
IFSM  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
120  
tbd  
A
mJ  
A
EAS  
IAS = 8 A; L = 180 µH; TVJ = 25°C; non repetitive  
VA =1.5 • VRRM typ.; f=10 kHz; repetitive  
Applications  
• Rectifiers in switch mode power  
supplies (SMPS)  
• Free wheeling diode in low voltage  
converters  
IAR  
tbd  
(dv/dt)cr  
5000  
V/µs  
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Advantages  
Ptot  
TC = 25°C  
mounting torque  
typical  
90  
0.4...0.6  
2
W
Nm  
g
• High reliability circuit operation  
• Low voltage peaks for reduced  
protection circuits  
• Low noise switching  
• Low losses  
Md  
Weight  
Symbol  
IR ꢀ  
VF  
Test Conditions  
Characteristic Values  
Dimensions see IXYS Databook 2001  
typ.  
max.  
TVJ = 25°C;VR = VRRM  
TVJ = 125°C;VR = VRRM  
0.3  
20  
mA  
mA  
IF = 8 A;  
IF = 8 A;  
IF = 16 A;  
TVJ = 125°C  
TVJ 25°C  
TVJ = 125°C  
0.62  
0.79  
0.73  
V
V
V
=
RthJC  
RthCH  
1.7  
K/W  
K/W  
0.5  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS Semiconductor GmbH  
© 2002 IXYS All rights reserved  
IXYS Corporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  
1 - 1  
Edisonstr. 15,  
D-68623 Lampertheim  
Phone: +49-6206-503-0, Fax: +49-6206-503627  

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