Datasheet > DSS3540MQ

DSS3540MQ

更新时间： 2023-12-06 20:11:27

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	361K
描述
PNP, 40V, 0.5A, DFN1006-3

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DSS3540MQ 数据手册

DSS3540MQ

Absolute Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-40

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-6

Collector Current - Continuous

Peak Pulse Collector Current

Peak Base Current

-500

-1

I_CM

-100

I_BM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

P_D

R_

Value

Unit

(Note 5)

(Note 6)

(Note 5)

(Note 6)

(Note 7)

400

1000

310

Power Dissipation

Thermal Resistance, Junction to Ambient

C/W

120

Thermal Resistance, Junction to Lead

120

°C/W

R_

Operating and Storage and Temperature Range

-55 to +150

°C

T_J, T_STG

ESD Ratings (Note 8)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Charged Device Model

Symbol

ESD HBM

ESD CDM

Value

4,000

1000

Unit

JEDEC Class

Notes:

5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.

6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.

7. Thermal resistance from junction to solder-point (on the exposed collector pad).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

2 of 7

www.diodes.com

December 2021

DSS3540MQ

Document number: DS43679 Rev. 1 - 2

123 4 5 6 7

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