Datasheet > DSKTJ07T

DSKTJ07T

更新时间： 2024-09-25 21:09:59

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	364K
描述
Small Signal Field-Effect Transistor, N-Channel, Junction FET

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技术参数
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DSKTJ07T 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.67	FET 技术：	JUNCTION
最高工作温度：	80 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.1 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

DSKTJ07T 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DSKTJ07

Silicon N-channel Junction FET

For impedance conversion in low frequency

 Package

 Features

ꢀCode

 Low noise voltage NV

 Contributes to miniaturization of sets, reduction of component count.

 Eco-friendly Halogen-free package

TSSSMini3-F2-B

ꢀPin Name

1: Drain

 Packaging

2: Source

Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)

3: Gate

 Absolute Maximum Ratings T_a= 25°C

 Marking Symbol: B

Parameter

Drain-source voltage (Gate open)

Drain-gate voltage (Souece open)

Drain-source current (Gate open)

Drain-gate current (Souece open)

Power dissipation

Symbol

V_DSO

V_DGO

I_DSO

Rating

Unit

°C

I_DGO

P_D

100

Operating ambient temperature

Storage temperature

T_opr

–20 to +80

–55 to +150

°C

stg

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

180

190

660

Typ

Max

470

460

Unit

Drain current^*

I_D

V_DS= 2.0 V, R_d= 2.2 kW ± 1%

Drain-source cutoff current ^*

I_DSS

V_DS= 2.0 V, R_d= 2.2 kW ± 1%, V_GS= 0

V_D= 2.0 V, V_GS= 0, f = 1 MHz

Forward transfer admittance

1500

Y_fs

V_D= 2.0 V, R_d= 2.2 kW ± 1%,

C_O= 5 pF, A-curve

Noise voltage ^*

G_V1

V_D= 2.0 V, R_d= 2.2 kW ± 1%,

C_O= 5 pF, eG = 10 mV, f = 1 kHz

–5.0

–7.0

–1.0

–1.5

V_D= 1.5 V, R_d= 2.2 kW ± 1%,

C_O= 5 pF, eG = 10 mV, f = 1 kHz

Voltage gain

G_V2

V_D= 2.0 V, R_d= 2.2 kW ± 1%,

C_O= 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz

ΔG_V. f ^*

1.7

2.0

Voltage gain difference

G_V1– G_V2



Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. A protection diode is built-in between gate and source of transistor. However if forward current ﬂows between gate and source transistor

might be damaged. So please be careful not insert reverse.

3. 1: I_Dis assured for I_{DSS .}

2: Rank classiﬁcation

Code

Rank

I_D(mA)

180 to 320

190 to 310

280 to 470

290 to 460

I_DSS(mA)

Marking Symbol

3: NV is assured for design.

4: ΔG . fis assured for AQL 0.065%. (The measurement method is used by source-grounded circuit.)

Publication date: December 2011

Ver. AED

12 3 4

中文翻译

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